Результаты поиска BCP56

Найдено 98 результатов.

• BCP56-16T1
  ON Semiconductor — TRANS NPN AUDIO 1A 80V SOT223
• BCP56-16T1
  ON Semiconductor — TRANS NPN AUDIO 1A 80V SOT223
• SBCP56T3G
  ON Semiconductor —
• SBCP56T3G
  ON Semiconductor —
• SBCP56T1G
  ON Semiconductor — ON Semiconductor SBCP56T1G Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Dc Collector/base Gain Hfe Min: 25 at 5 mA at 2 V, 40 at 150 mA at 2 V, 25 at 500 mA at 2 V Dc Current Gain Hfe Max: 25 at 5 mA at 2 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 130 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1500 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 130 MHz DC Collector/Base Gain hfe Min: 25 at 5 mA at 2 V, 40 at 150 mA at 2 V, 25 at 500 mA at 2 V DC Current Gain hFE Max: 25 at 5 mA at 2 V
• SBCP56T1G
  ON Semiconductor — ON Semiconductor SBCP56T1G Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Dc Collector/base Gain Hfe Min: 25 at 5 mA at 2 V, 40 at 150 mA at 2 V, 25 at 500 mA at 2 V Dc Current Gain Hfe Max: 25 at 5 mA at 2 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 130 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1500 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 130 MHz DC Collector/Base Gain hfe Min: 25 at 5 mA at 2 V, 40 at 150 mA at 2 V, 25 at 500 mA at 2 V DC Current Gain hFE Max: 25 at 5 mA at 2 V
• BCP56,135
  NXP Semiconductors — NXP Semiconductors BCP56,135 Transistor Type: GENERAL PURPOSE SMALL SIGNAL
• BCP56,115
  NXP Semiconductors — Philips Semiconductors BCP56,115 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 63 at 5 mA at 2 V, 63 at 150 mA at 2 V, 40 at 500 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 63 at 5 mA at 2 V Maximum Power Dissipation: 960 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BCP56 T/R
• BCP5610TA
  Diodes — Diodes BCP5610TA Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 63 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C
• BCP5610TA
  Diodes — Diodes BCP5610TA Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 63 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C