Результаты поиска ERJ-14NF93R1U

Найдено 641 результатов.

• CMF-2100
  Tamura — Common Mode Transformers 2.2A 10mH 0.3ohm 250VAC 50/60Hz
• CMF2SMLF
  Gowanda Electronics —
• CMF20335%
  Vishay/Dale — 1/2WATT Metal Film Resistors .
• CMF20120D
  CREE — CREE CMF20120D Configuration: Single Continuous Drain Current: 33 A Continuous Drain Current Id: 33A Current - Continuous Drain (id) @ 25В° C: 33A Drain Source Voltage Vds: 1200V Drain To Source Voltage (vdss): 1200V (1.2kV) Drain-source Breakdown Voltage: 1200 V Fet Feature: Standard Fet Type: SiCFET N-Channel, Silicon Carbide Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S Gate Charge (qg) @ Vgs: 90.8nC @ 20V Gate Charge Qg: 90.8 nC Gate-source Breakdown Voltage: 25 V ID_COMPONENTS: 2661695 Input Capacitance (ciss) @ Vds: 1915pF @ 800V Mfg Application Notes: SiC MOSFETs Application Considerations Mounting Style: Through Hole Mounting Type: Through Hole On Resistance Rds(on): 0.08ohm Package / Case: TO-247-3 Power - Max: 150W Power Dissipation: 150 W Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V Rds(on) Test Voltage Vgs: 20V Resistance Drain-source Rds (on): 80 mOhms Series: SiC MOSFET Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 1200 V Gate-Source Breakdown Voltage: 25 V Resistance Drain-Source RDS (on): 80 mOhms Forward Transconductance gFS (Max / Min): 7.3 S, 6.8 S
• CMF20120D
  CREE — CREE CMF20120D Configuration: Single Continuous Drain Current: 33 A Continuous Drain Current Id: 33A Current - Continuous Drain (id) @ 25В° C: 33A Drain Source Voltage Vds: 1200V Drain To Source Voltage (vdss): 1200V (1.2kV) Drain-source Breakdown Voltage: 1200 V Fet Feature: Standard Fet Type: SiCFET N-Channel, Silicon Carbide Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S Gate Charge (qg) @ Vgs: 90.8nC @ 20V Gate Charge Qg: 90.8 nC Gate-source Breakdown Voltage: 25 V ID_COMPONENTS: 2661695 Input Capacitance (ciss) @ Vds: 1915pF @ 800V Mfg Application Notes: SiC MOSFETs Application Considerations Mounting Style: Through Hole Mounting Type: Through Hole On Resistance Rds(on): 0.08ohm Package / Case: TO-247-3 Power - Max: 150W Power Dissipation: 150 W Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V Rds(on) Test Voltage Vgs: 20V Resistance Drain-source Rds (on): 80 mOhms Series: SiC MOSFET Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 1200 V Gate-Source Breakdown Voltage: 25 V Resistance Drain-Source RDS (on): 80 mOhms Forward Transconductance gFS (Max / Min): 7.3 S, 6.8 S
• CMF20120D
  CREE — CREE CMF20120D Configuration: Single Continuous Drain Current: 33 A Continuous Drain Current Id: 33A Current - Continuous Drain (id) @ 25В° C: 33A Drain Source Voltage Vds: 1200V Drain To Source Voltage (vdss): 1200V (1.2kV) Drain-source Breakdown Voltage: 1200 V Fet Feature: Standard Fet Type: SiCFET N-Channel, Silicon Carbide Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S Gate Charge (qg) @ Vgs: 90.8nC @ 20V Gate Charge Qg: 90.8 nC Gate-source Breakdown Voltage: 25 V ID_COMPONENTS: 2661695 Input Capacitance (ciss) @ Vds: 1915pF @ 800V Mfg Application Notes: SiC MOSFETs Application Considerations Mounting Style: Through Hole Mounting Type: Through Hole On Resistance Rds(on): 0.08ohm Package / Case: TO-247-3 Power - Max: 150W Power Dissipation: 150 W Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V Rds(on) Test Voltage Vgs: 20V Resistance Drain-source Rds (on): 80 mOhms Series: SiC MOSFET Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 1200 V Gate-Source Breakdown Voltage: 25 V Resistance Drain-Source RDS (on): 80 mOhms Forward Transconductance gFS (Max / Min): 7.3 S, 6.8 S
• CMF28A TR
  Central Semiconductor — Central Semiconductor CMF28A TR Clamping Voltage-Max: 45.4 V Breakdown Voltage-Min: 31.1 V Breakdown Voltage-Max: 34.4 V Power Dissipation: 200 W Directional: Uni-Directional
• CMF24A TR
  Central Semiconductor — Central Semiconductor CMF24A TR Breakdown Voltage: 26.7 V to 29.5 V Clamping Voltage: 38.9 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Operating Voltage: 24 V Package / Case: SOD-123F Peak Pulse Power Dissipation: 200 W Polarity: Unidirectional Series: CMF5.0A Termination Style: SMD/SMT Product Category: TVS Diodes - Transient Voltage Suppressors RoHS: yes Channels: 1 Channel
• CMF201.8K5%
  Vishay/Dale — 1/2WATT Metal Film Resistors 1/2watt 1.8Kohms 5%
• CMF2.1111.12
  Schurter — Power Entry Modules 2.5A POLAR INLET PCB