CMF20120D datasheet

Маркировка

CMF20120D
Производитель

CREE
Описание

CREE CMF20120D Configuration: Single Continuous Drain Current: 33 A Continuous Drain Current Id: 33A Current - Continuous Drain (id) @ 25?° C: 33A Drain Source Voltage Vds: 1200V Drain To Source Voltage (vdss): 1200V (1.2kV) Drain-source Breakdown Voltage: 1200 V Fet Feature: Standard Fet Type: SiCFET N-Channel, Silicon Carbide Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S Gate Charge (qg) @ Vgs: 90.8nC @ 20V Gate Charge Qg: 90.8 nC Gate-source Breakdown Voltage: 25 V ID_COMPONENTS: 2661695 Input Capacitance (ciss) @ Vds: 1915pF @ 800V Mfg Application Notes: SiC MOSFETs Application Considerations Mounting Style: Through Hole Mounting Type: Through Hole On Resistance Rds(on): 0.08ohm Package / Case: TO-247-3 Power - Max: 150W Power Dissipation: 150 W Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V Rds(on) Test Voltage Vgs: 20V Resistance Drain-source Rds (on): 80 mOhms Series: SiC MOSFET Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 1200 V Gate-Source Breakdown Voltage: 25 V Resistance Drain-Source RDS (on): 80 mOhms Forward Transconductance gFS (Max / Min): 7.3 S, 6.8 S
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