Результаты поиска BCP56-10

Найдено 25 результатов.

• BCP56-10
  Philips — NPN medium power transistors
• BCP56-10
  Zetex Semiconductors — SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
• BCP56-10
  Infineon — General Purpose Transistors - SOT223 package
• BCP56-10
  Siemens — NPN Silicon AF Transistors (For AF driver and output stages High collector current)
• BCP5610
  Zetex Semiconductors — Obsolete
• BCP56-10T1
  ON Semiconductor — Transistors Bipolar- General Purpose 1A 100V NPN
• BCP5610TA
  Diodes — Diodes BCP5610TA Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 63 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C
• BCP5610TA
  Diodes — Diodes BCP5610TA Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 63 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C
• BCP5610TC
  Zetex Semiconductors — Zetex Semiconductors BCP5610TC Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 80 V Dc Current Gain Hfe Max: 63 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Current Gain hFE Max: 63
• BCP5610TC
  Zetex Semiconductors — Zetex Semiconductors BCP5610TC Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 80 V Dc Current Gain Hfe Max: 63 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Current Gain hFE Max: 63