4N29A(SHORT,F) datasheet

Маркировка

4N29A(SHORT,F)
Производитель

TOSHIBA Semiconductor
Описание

TOSHIBA Semiconductor 4N29A(SHORT,F) Current - Dc Forward (if): 80mA Current - Output / Channel: 100mA Current Transfer Ratio (max): - Current Transfer Ratio (min): 500% @ 10mA Input Type: DC Mounting Type: Through Hole Number Of Channels: 1 Output Type: Darlington with Base Package / Case: 6-DIP Series: - Vce Saturation (max): 1V Voltage - Isolation: 2500Vrms Voltage - Output: 30V Product Category: Transistor Output Optocouplers RoHS: yes Maximum Collector Emitter Voltage: 30 V Maximum Collector Emitter Saturation Voltage: 1 V Isolation Voltage: 2500 Vrms Current Transfer Ratio: 500 % Maximum Forward Diode Voltage: 1.5 V Maximum Input Diode Current: 80 mA Maximum Power Dissipation: 250 mW Maximum Operating Temperature: + 100 C Minimum Operating Temperature: - 55 C Forward Current: 10 mA Maximum Reverse Diode Voltage: 3 V Number of Channels per Chip: 1 Channel Output Device: Photodarlington Factory Pack Quantity: 50
Количество страниц

6 шт.
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286,66 KB