STP32NM50N datasheet
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
О ДАТАШИТЕ
-
МаркировкаSTP32NM50N
-
Производитель
-
ОписаниеSTMicroelectronics STP32NM50N Configuration: Single Continuous Drain Current: 13.86 A Drain-source Breakdown Voltage: 500 V Fall Time: 23.6 ns Gate Charge Qg: 62.5 nC Gate-source Breakdown Voltage: 25 V Mounting Style: Through Hole Package / Case: TO-220 Power Dissipation: 190 W Resistance Drain-source Rds (on): 0.13 Ohms Rise Time: 9.5 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 110 ns RoHS: yes Drain-Source Breakdown Voltage: 500 V Gate-Source Breakdown Voltage: 25 V Resistance Drain-Source RDS (on): 0.13 Ohms Typical Turn-Off Delay Time: 110 ns
-
Количество страниц21 шт.
-
Форматы файлаHTML, PDF
Где можно купить
Новости электроники
18.04.2024
17.04.2024
16.04.2024