PHB119NQ06T,118

PHB119NQ06T,118 datasheet

Маркировка

PHB119NQ06T,118
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PHB119NQ06T,118 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 53nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2820pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 200W Power Dissipation: 200 W Rds On (max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0071 Ohms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0071 Ohms Fall Time: 41 ns Rise Time: 52 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 77 ns Part # Aliases: /T3 PHB119NQ06T Other Names: 934058551118, PHB119NQ06T /T3
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13 шт.
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