BSS123,215

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BSS123,215 datasheet

• Маркировка
  BSS123,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BSS123,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 0.15 A Current - Continuous Drain (id) @ 25?° C: 150mA Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Drain-source On-res: 6Ohm Drain-source On-volt: 100V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V Gate-source Voltage (max): ?±20V ID_COMPONENTS: 1951763 Input Capacitance (ciss) @ Vds: 40pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: N Power - Max: 250mW Power Dissipation: 250 mW Rds On (max) @ Id, Vgs: 6 Ohm @ 120mA, 10V Resistance Drain-source Rds (on): 6 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Type: Power MOSFET Vgs(th) (max) @ Id: 2.8V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 6000 mOhms Factory Pack Quantity: 3000 Part # Aliases: BSS123 T/R Other Names: 568-4873-2, 933946340215, BSS123 T/R, BSS123,215
• Количество страниц
  4 шт.
• Форматы файла
  HTML, PDF

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