BSC252N10NSFGATMA1 datasheet

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• Маркировка
  BSC252N10NSFGATMA1
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies BSC252N10NSFGATMA1 Mfr Package Description: GREEN, PLASTIC, TDSON-8 EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Finish: NOT SPECIFIED Terminal Position: DUAL Number of Terminals: 5 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 7.2 A DS Breakdown Voltage-Min: 100 V Avalanche Energy Rating (Eas): 68 mJ Drain-source On Resistance-Max: 0.0252 ohm Pulsed Drain Current-Max (IDM): 160 A
• Количество страниц
  10 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  601,21 KB

BSC252N10NSFGATMA1 datasheet скачать

BSC252N10NSFGATMA1 datasheet