Результаты поиска IRF730

Найдено 116 результатов.

• IRF7309TRPBF
  International Rectifier — MOSFET N+P 30V 3A 8-SOIC
• IRF7309TRPBF
  International Rectifier — MOSFET N+P 30V 3A 8-SOIC
• AUIRF7309QTR
  IR (International Rectifier) — IR (International Rectifier) AUIRF7309QTR RoHS: yes Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 4 A Resistance Drain-Source RDS (on): 80 mOhms Mounting Style: SMD/SMT Package / Case: SOIC-8 Gate Charge Qg: 16.7 nC Power Dissipation: 1.4 W Factory Pack Quantity: 4000
• AUIRF7309QTR
  IR (International Rectifier) — IR (International Rectifier) AUIRF7309QTR RoHS: yes Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 4 A Resistance Drain-Source RDS (on): 80 mOhms Mounting Style: SMD/SMT Package / Case: SOIC-8 Gate Charge Qg: 16.7 nC Power Dissipation: 1.4 W Factory Pack Quantity: 4000
• AUIRF7309QTR
  IR (International Rectifier) — IR (International Rectifier) AUIRF7309QTR RoHS: yes Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 4 A Resistance Drain-Source RDS (on): 80 mOhms Mounting Style: SMD/SMT Package / Case: SOIC-8 Gate Charge Qg: 16.7 nC Power Dissipation: 1.4 W Factory Pack Quantity: 4000
• AUIRF7304QTR
  IR (International Rectifier) — IR (International Rectifier) AUIRF7304QTR Configuration: Dual Dual Drain Continuous Drain Current: 4.3 A Continuous Drain Current Id: -4.3A Drain Source Voltage Vds: -20V Drain-source Breakdown Voltage: 20 V Gate Charge Qg: 14.7 nC Gate-source Breakdown Voltage: +/- 12 V Minimum Operating Temperature: - 55 C Module Configuration: Dual Mounting Style: SMD/SMT On Resistance Rds(on): 0.14ohm Package / Case: SOIC N Power Dissipation: 2 W Resistance Drain-source Rds (on): 90 mOhms Rohs Compliant: Yes Transistor Polarity: P Channel
• AUIRF7303QTR
  IR (International Rectifier) — IR (International Rectifier) AUIRF7303QTR Configuration: Dual Dual Drain Continuous Drain Current: 4.9 A Continuous Drain Current Id: 4.9A Drain Source Voltage Vds: 30V Drain-source Breakdown Voltage: 30 V Gate Charge Qg: 16.7 nC Gate-source Breakdown Voltage: +/- 20 V Minimum Operating Temperature: - 55 C Module Configuration: Dual Mounting Style: SMD/SMT On Resistance Rds(on): 0.08ohm Package / Case: SOIC N Power Dissipation: 2 W Rds(on) Test Voltage Vgs: 4.5V Resistance Drain-source Rds (on): 50 mOhms Rohs Compliant: Yes Transistor Polarity: N Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 80 mOhms Factory Pack Quantity: 4000 Typical Turn-Off Delay Time: 22 ns
• AUIRF7303QTR
  IR (International Rectifier) — IR (International Rectifier) AUIRF7303QTR Configuration: Dual Dual Drain Continuous Drain Current: 4.9 A Continuous Drain Current Id: 4.9A Drain Source Voltage Vds: 30V Drain-source Breakdown Voltage: 30 V Gate Charge Qg: 16.7 nC Gate-source Breakdown Voltage: +/- 20 V Minimum Operating Temperature: - 55 C Module Configuration: Dual Mounting Style: SMD/SMT On Resistance Rds(on): 0.08ohm Package / Case: SOIC N Power Dissipation: 2 W Rds(on) Test Voltage Vgs: 4.5V Resistance Drain-source Rds (on): 50 mOhms Rohs Compliant: Yes Transistor Polarity: N Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 80 mOhms Factory Pack Quantity: 4000 Typical Turn-Off Delay Time: 22 ns
• IRF730STRLPBF
  Vishay Semiconductors — Single-Gate MOSFET Transistors N-Chan 400V 5.5 Amp
• IRF730STRRPBF
  Vishay Semiconductors — Single-Gate MOSFET Transistors N-Chan 400V 5.5 Amp