Результаты поиска BSS138

Найдено 129 результатов.

• BSS138P,215
  NXP Semiconductors — NXP Semiconductors BSS138P,215 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Continuous Drain Current: 360 mA Resistance Drain-Source RDS (on): 1.6 Ohms Mounting Style: SMD/SMT Package / Case: SOT-23 Forward Transconductance gFS (Max / Min): 700 mS Gate Charge Qg: 0.8 nC Power Dissipation: 350 mW Factory Pack Quantity: 3000
• LBSS138WT3G
  LRC (Leshan Radio Company) —
• lbss138wt1g
  LRC (Leshan Radio Company) —
• BSS138G-AE2-R
  UTC [Unisonic Technologies] — N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
• BSS138G-AL3-R
  UTC [Unisonic Technologies] — N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
• BSS138L-AE2-R
  UTC [Unisonic Technologies] — N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
• BSS138L-AL3-R
  UTC [Unisonic Technologies] — N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
• BSS138N-E6327
  Infineon Technologies — MOSFET N-CH 60V 230MA SOT-23
• BSS138N-E6327
  Infineon Technologies — MOSFET N-CH 60V 230MA SOT-23
• BSS138E-6327
  Infineon Technologies — Infineon Technologies BSS138E-6327 Mfr Package Description: SOT-23, 3 PIN Package Shape: RECTANGULAR Package Style: CYLINDRICAL Terminal Form: GULL WING Terminal Finish: NOT SPECIFIED Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2200 A DS Breakdown Voltage-Min: 50 V Drain-source On Resistance-Max: 3.5 ohm