Результаты поиска BCP56
Найдено 98 результатов.
- Philips Semiconductors — Philips Semiconductors BCP56-16,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 100 at 150 mA at 2 V Maximum Power Dissipation: 960 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: /T3 BCP56-16
- Philips Semiconductors — Philips Semiconductors BCP56-16 /T3 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 63 at 5 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 Maximum Power Dissipation: 960 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: BCP56-16,135
- Philips Semiconductors — Philips Semiconductors BCP56-10 /T3 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.5 V Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 Continuous Collector Current: 1 A Maximum Power Dissipation: 960 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: BCP56-10,135
- ON Semiconductor — ON Semiconductor SBCP56-16T3G Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 80 V Collector-emitter Saturation Voltage: 0.5 V Configuration: Single Continuous Collector Current: 1 A Dc Current Gain Hfe Max: 250 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 130 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1.5 W Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.5 V Gain Bandwidth Product fT: 130 MHz DC Current Gain hFE Max: 250
- ON Semiconductor — ON Semiconductor SBCP56-16T3G Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 80 V Collector-emitter Saturation Voltage: 0.5 V Configuration: Single Continuous Collector Current: 1 A Dc Current Gain Hfe Max: 250 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 130 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1.5 W Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.5 V Gain Bandwidth Product fT: 130 MHz DC Current Gain hFE Max: 250
- ON Semiconductor — ON Semiconductor SBCP56-16T1G Collector- Base Voltage Vcbo: 100 VDC Collector- Emitter Voltage Vceo Max: 80 VDC Collector-emitter Saturation Voltage: 0.5 VDC Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 25 mA Dc Current Gain Hfe Max: 250 mA Emitter- Base Voltage Vebo: 5 VDC Gain Bandwidth Product Ft: 130 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1.5 W Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 VDC Collector- Emitter Voltage VCEO Max: 80 VDC Emitter- Base Voltage VEBO: 5 VDC Collector-Emitter Saturation Voltage: 0.5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 130 MHz DC Collector/Base Gain hfe Min: 25 mA DC Current Gain hFE Max: 250 mA
- ON Semiconductor — ON Semiconductor SBCP56-16T1G Collector- Base Voltage Vcbo: 100 VDC Collector- Emitter Voltage Vceo Max: 80 VDC Collector-emitter Saturation Voltage: 0.5 VDC Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 25 mA Dc Current Gain Hfe Max: 250 mA Emitter- Base Voltage Vebo: 5 VDC Gain Bandwidth Product Ft: 130 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1.5 W Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 VDC Collector- Emitter Voltage VCEO Max: 80 VDC Emitter- Base Voltage VEBO: 5 VDC Collector-Emitter Saturation Voltage: 0.5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 130 MHz DC Collector/Base Gain hfe Min: 25 mA DC Current Gain hFE Max: 250 mA
- ON Semiconductor —
- Infineon Technologies —
- Infineon Technologies —
