Результаты поиска BAS20

Найдено 131 результатов.

• SBAS20LT1G
  ON Semiconductor — ON Semiconductor SBAS20LT1G Configuration: Single Forward Continuous Current: 200 mA Forward Voltage Drop: 1.25 V Max Surge Current: 625 mA Maximum Diode Capacitance: 5 pF Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 385 mW Maximum Reverse Leakage Current: 100 uA Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Peak Reverse Voltage: 250 V Product: Switching Diodes Recovery Time: 50 ns
• SBAS20HT1G
  ON Semiconductor —
• LBAS20HT3G
  LRC (Leshan Radio Company) —
• LBAS20LT1G
  LRC (Leshan Radio Company) —
• LBAS20HT1G
  LRC (Leshan Radio Company) —
• BAS20E6327
  Infineon Technologies —
• BAS20E6433
  Infineon Technologies —
• BAS20DW_09
  Diodes —
• BAS20-13-F
  Diodes —
• BAS20DW-13
  Diodes — Diodes BAS20DW-13 Mfr Package Description: GREEN, PLASTIC PACKAGE-6 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 6 Package Body Material: PLASTIC/EPOXY Configuration: SEPARATE, 2 ELEMENTS Number of Elements: 2 Diode Element Material: SILICON Power Dissipation Limit-Max: 0.2000 W Diode Type: SIGNAL DIODE Reverse Recovery Time-Max: 0.0500 us Rep Pk Reverse Voltage-Max: 200 V Average Forward Current-Max: 0.2000 A