Результаты поиска BSS84

Найдено 153 результатов.

• BSS84AKMB
  NXP Semiconductors — NXP Semiconductors BSS84AKMB Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Terminal Finish: TIN Transistor Type: GENERAL PURPOSE SMALL SIGNAL
• BSS84.215
  NXP Semiconductors —
• BSS84,215
  NXP Semiconductors — NXP Semiconductors BSS84,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 0.13 A Current - Continuous Drain (id) @ 25?° C: 130mA Drain To Source Voltage (vdss): 50V Drain-source Breakdown Voltage: 50 V Drain-source On-res: 10Ohm Drain-source On-volt: 50V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V Gate-source Voltage (max): ?±20V ID_COMPONENTS: 1951770 Input Capacitance (ciss) @ Vds: 45pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: P Power - Max: 250mW Power Dissipation: 250 mW Rds On (max) @ Id, Vgs: 10 Ohm @ 130mA, 10V Resistance Drain-source Rds (on): 10 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Type: Small Signal Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 50 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 10000 mOhms Factory Pack Quantity: 3000 Part # Aliases: BSS84 T/R Other Names: 568-1660-2, 933946360215, BSS84 T/R, BSS84T/R
• BSS84P_06
  Infineon Technologies —
• BSS84D89Z
  Fairchild Semiconductor — Fairchild Semiconductor BSS84D89Z Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: P-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1300 A Feedback Cap-Max (Crss): 12 pF DS Breakdown Voltage-Min: 50 V Drain-source On Resistance-Max: 10 ohm
• BSS84D27Z
  Fairchild Semiconductor — Fairchild Semiconductor BSS84D27Z Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: P-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1300 A Feedback Cap-Max (Crss): 12 pF DS Breakdown Voltage-Min: 50 V Drain-source On Resistance-Max: 10 ohm
• BSS84W-13
  Diodes — Diodes BSS84W-13 Mfr Package Description: PLASTIC PACKAGE-3 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN LEAD Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: P-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1300 A Feedback Cap-Max (Crss): 12 pF DS Breakdown Voltage-Min: 50 V Drain-source On Resistance-Max: 10 ohm
• BSS84V_07
  Diodes —
• BSS84DW_2
  Diodes —
• BSS84J18Z
  TI (Texas Instruments) — TI (Texas Instruments) BSS84J18Z Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: P-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1300 A Feedback Cap-Max (Crss): 12 pF DS Breakdown Voltage-Min: 50 V Drain-source On Resistance-Max: 10 ohm