Результаты поиска BSS123

Найдено 83 результатов.

• BSS123 L6327
  Infineon Technologies — MOSFET N-CH 100V 170MA SOT-23
• BSS123 E6433
  Infineon Technologies — MOSFET N-CH 100V 170MA SOT-23
• BSS123 E7874
  Infineon Technologies — MOSFET N-CH 100V 170MA SOT-23
• BSS123NH6327
  Infineon Technologies — Infineon Technologies BSS123NH6327 Mfr Package Description: GREEN, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1900 A Feedback Cap-Max (Crss): 3.1 pF DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 6 ohm
• BSS123E-6327
  Infineon Technologies — Infineon Technologies BSS123E-6327 Mfr Package Description: SOT-23, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1700 A DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 6 ohm
• BSS123W_0711
  Diodes —
• BSS123Q-13-F
  Diodes — Diodes BSS123Q-13-F Lead Free: Yes EU RoHS Compliant: Yes Terminal Finish: MATTE TIN Transistor Type: GENERAL PURPOSE SMALL SIGNAL
• BSS123L6327XT
  Infineon Technologies — Infineon Technologies BSS123L6327XT Channel Mode: Enhancement Drain Current (max): 170mA Drain Efficiency: Not Required% Drain-source On-res: 6Ohm Drain-source On-volt: 100V Frequency (max): Not RequiredMHz Gate-source Voltage (max): В±20V Mounting: Surface Mount Noise Figure: Not RequireddB Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Output Power (max): Not RequiredW Package Type: SOT-23 Pin Count: 3 Polarity: N Power Dissipation: 360mW Power Gain: Not RequireddB Type: Small Signal
• BSS123-TAPE-13
  NXP Semiconductors — NXP Semiconductors BSS123-TAPE-13 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.2500 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1500 A Feedback Cap-Max (Crss): 10 pF DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 6 ohm
• BSS123L6327HTSA1
  Infineon Technologies —