Результаты поиска BCP56
Найдено 98 результатов.
- Siemens — NPN Silicon AF Transistors (For AF driver and output stages High collector current)
- ON Semiconductor —
- NXP Semiconductors — Philips Semiconductors BCP56-16,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 100 at 150 mA at 2 V Maximum Power Dissipation: 960 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: /T3 BCP56-16
- NXP Semiconductors — NXP Semiconductors BCP56-16,115 Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Dual Collector Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 180MHz ID_COMPONENTS: 1949860 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 180 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 960mW Power Dissipation: 960 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2 V DC Current Gain hFE Max: 100 at 150 mA at 2 V Maximum Power Dissipation: 960 mW Factory Pack Quantity: 1000 Part # Aliases: BCP56-16 T/R Other Names: 568-5009-2, 933917260115, BCP56-16 T/R, BCP56-16,115
- NXP Semiconductors — NXP Semiconductors BCP56-16,115 Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Dual Collector Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 180MHz ID_COMPONENTS: 1949860 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 180 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 960mW Power Dissipation: 960 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2 V DC Current Gain hFE Max: 100 at 150 mA at 2 V Maximum Power Dissipation: 960 mW Factory Pack Quantity: 1000 Part # Aliases: BCP56-16 T/R Other Names: 568-5009-2, 933917260115, BCP56-16 T/R, BCP56-16,115
- NXP Semiconductors — Philips Semiconductors BCP56-16 /T3 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 63 at 5 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 Maximum Power Dissipation: 960 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: BCP56-16,135
- NXP Semiconductors — NXP Semiconductors BCP56-10,135 Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 960mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Brand: NXP Semiconductors DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V DC Current Gain hFE Max: 63 at 150 mA at 2 V Maximum Power Dissipation: 960 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: /T3 BCP56-10 Other Names: 933917250135, BCP56-10 /T3
- NXP Semiconductors — NXP Semiconductors BCP56-10,135 Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 960mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Brand: NXP Semiconductors DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V DC Current Gain hFE Max: 63 at 150 mA at 2 V Maximum Power Dissipation: 960 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: /T3 BCP56-10 Other Names: 933917250135, BCP56-10 /T3
- NXP Semiconductors — NXP Semiconductors BCP56-10,115 Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Dual Collector Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 180MHz ID_COMPONENTS: 1949427 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 180 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 960mW Power Dissipation: 960 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Other Names: 933917250115, BCP56-10 T/R
- NXP Semiconductors — Philips Semiconductors BCP56-10 /T3 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.5 V Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 Continuous Collector Current: 1 A Maximum Power Dissipation: 960 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: BCP56-10,135