Результаты поиска 51055

Найдено 81 результатов.

• 875105545004
  Wurth Electronics Inc — CAP POLY 33UF 20% 25V SMD
• 875105545005
  Wurth Electronics Inc — CAP POLY 39UF 20% 25V SMD
• 875105545005
  Wurth Electronics Inc — CAP POLY 39UF 20% 25V SMD
• 875105545005
  Wurth Electronics Inc — CAP POLY 39UF 20% 25V SMD
• 251-055-1021P
  Winchester Electronics — Winchester Electronics 251-055-1021P Option: GENERAL PURPOSE MIL Conformance: Yes Body/Shell Style: JACK Manufacturer Series: 25 Characteristic Impedance: 50 ohm Connection Type: SMA CONNECTOR Connector Style: STRAIGHT Contact Gender: FEMALE Coupling Type: THREADED Dielectric Material: POLYTETRAFLUORO ETHYLENE Operating Frequency-Max: 18 GHz Panel Mount: Yes
• 103002510-5501
  B&B Electronics —
• BUK9510-55A,127
  NXP Semiconductors — NXP Semiconductors BUK9510-55A,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fall Time: 139 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 68nC @ 5V Gate-source Breakdown Voltage: +/- 15 V Input Capacitance (ciss) @ Vds: 4307pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 200W Power Dissipation: 200 W Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.009 Ohms Rise Time: 155 ns Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.009 Ohms Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 192 ns Part # Aliases: BUK9510-55A Other Names: 934056851127, BUK9510-55A
• BUK9510-55A,127
  NXP Semiconductors — NXP Semiconductors BUK9510-55A,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fall Time: 139 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 68nC @ 5V Gate-source Breakdown Voltage: +/- 15 V Input Capacitance (ciss) @ Vds: 4307pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 200W Power Dissipation: 200 W Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.009 Ohms Rise Time: 155 ns Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.009 Ohms Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 192 ns Part # Aliases: BUK9510-55A Other Names: 934056851127, BUK9510-55A
• BUK7510-55AL_08
  NXP Semiconductors —
• JF04R0R051055AA
  JAE [Japan Aviation Electronics Industry, Ltd.] — FFC CONDUCTOR: COPPER ALLOY, INSULATION TAPE: PET / ADHESIVES