Результаты поиска BFS17

Найдено 74 результатов.

• BFS17W,135
  Philips Semiconductors — Philips Semiconductors BFS17W,135 RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 2.5 V Continuous Collector Current: 50 mA Power Dissipation: 300 mW DC Collector/Base Gain hfe Min: 25 Package / Case: SOT-323 Mounting Style: SMD/SMT Factory Pack Quantity: 10000
• BFS17A,235
  Philips Semiconductors — Philips Semiconductors BFS17A,235 RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 2.5 V Continuous Collector Current: 25 mA Power Dissipation: 300 mW DC Collector/Base Gain hfe Min: 25 Package / Case: SOT-23 Mounting Style: SMD/SMT Factory Pack Quantity: 10000
• BFS17W,135
  NXP Semiconductors — Philips Semiconductors BFS17W,135 RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 2.5 V Continuous Collector Current: 50 mA Power Dissipation: 300 mW DC Collector/Base Gain hfe Min: 25 Package / Case: SOT-323 Mounting Style: SMD/SMT Factory Pack Quantity: 10000
• BFS17W,135
  NXP Semiconductors — Philips Semiconductors BFS17W,135 RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 2.5 V Continuous Collector Current: 50 mA Power Dissipation: 300 mW DC Collector/Base Gain hfe Min: 25 Package / Case: SOT-323 Mounting Style: SMD/SMT Factory Pack Quantity: 10000
• BFS17SE6327
  Infineon Technologies — DUAL NPN TRANS RADIO FREQ BROAD
• BFS17WE6327
  Infineon Technologies — Infineon Technologies BFS17WE6327 Comm_code: 85412100 Eccn: EAR99 Lead_time: 994 Pack_quantity: 3000 Quantity: 177000
• BFS17SE6433
  Infineon Technologies —
• BFS17PE6433
  Infineon Technologies — Infineon Technologies BFS17PE6433 Mfr Package Description: SOT-23, 3 PIN Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: NPN Transistor Type: RF SMALL SIGNAL Highest Frequency Band: ULTRA HIGH FREQUENCY BAND Collector Current-Max (IC): 0.0250 A Collector-emitter Voltage-Max: 15 V Transition Frequency-Nom (fT): 2500 MHz Collector-base Capacitance-Max: 0.8000 pF
• BFS17PE6327
  Infineon Technologies — Infineon Technologies BFS17PE6327 Comm_code: 85412100 Eccn: EAR99 Lead_time: 140 Pack_quantity: 3000 Quantity: 21000
• BFS17R-GS08
  Vishay Intertechnology — Vishay Intertechnology BFS17R-GS08 Mfr Package Description: PLASTIC PACKAGE-3 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.2000 W Transistor Type: RF SMALL SIGNAL Highest Frequency Band: ULTRA HIGH FREQUENCY BAND Collector Current-Max (IC): 0.0250 A Collector-emitter Voltage-Max: 15 V Transition Frequency-Nom (fT): 2100 MHz