Результаты поиска BCP69

Найдено 98 результатов.

• BCP69E6327
  Rochester Electronics — Rochester Electronics BCP69E6327 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: NOT SPECIFIED Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: PNP Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 85 Collector Current-Max (IC): 1 A Collector-emitter Voltage-Max: 20 V Transition Frequency-Nom (fT): 100 MHz
• BCP69-16/IN
  NXP Semiconductors —
• BCP69-16/DG
  NXP Semiconductors —
• NSVBCP69T1G
  ON Semiconductor — TRANS PNP 20V 1A SOT223
• BCP69-16,115
  Philips Semiconductors — Philips Semiconductors BCP69-16,115 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 32 V Collector- Emitter Voltage VCEO Max: 20 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 140 MHz DC Collector/Base Gain hfe Min: 100 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 100 at 500 mA at 1 V Maximum Power Dissipation: 1400 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BCP69-16 T/R
• BCP69-TAPE-7
  NXP Semiconductors — NXP Semiconductors BCP69-TAPE-7 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 1.5 W Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 60 Collector Current-Max (IC): 1 A Collector-emitter Voltage-Max: 20 V Transition Frequency-Nom (fT): 60 MHz
• BCP69-25,135
  NXP Semiconductors — Philips Semiconductors BCP69-25,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 32 V Collector- Emitter Voltage VCEO Max: 20 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 140 MHz DC Collector/Base Gain hfe Min: 160 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 160 at 500 mA at 1 V Maximum Power Dissipation: 1400 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: /T3 BCP69-25
• BCP69-25,115
  NXP Semiconductors — Philips Semiconductors BCP69-25,115 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 32 V Collector- Emitter Voltage VCEO Max: 20 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 140 MHz DC Collector/Base Gain hfe Min: 160 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 160 at 500 mA at 1 V Maximum Power Dissipation: 1400 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BCP69-25 T/R
• BCP69-25 /T3
  NXP Semiconductors — NXP Semiconductors BCP69-25 /T3 Collector- Base Voltage Vcbo: 32 V Collector- Emitter Voltage Vceo Max: 20 V Collector-emitter Saturation Voltage: 5 V Configuration: Single Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 140 at 500 mA at 1 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 4000 Gain Bandwidth Product Ft: 140 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1400 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-223 Part # Aliases: BCP69-25,135 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: PNP
• BCP69-16,115
  NXP Semiconductors — Philips Semiconductors BCP69-16,115 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 32 V Collector- Emitter Voltage VCEO Max: 20 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 140 MHz DC Collector/Base Gain hfe Min: 100 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 100 at 500 mA at 1 V Maximum Power Dissipation: 1400 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BCP69-16 T/R