Результаты поиска A256

Найдено 956 результатов.

• OR2C15A4BA256-DB
  Lattice — Field Programmable Gate Arrays - FPGAs Use ECP/EC or XP
• OR2T15B8BA256-DB
  Lattice — Field Programmable Gate Arrays - FPGAs Use ECP/EC or XP
• OR2T08A5BA256-DB
  Lattice — Field Programmable Gate Arrays - FPGAs Use ECP/EC or XP
• OR2C12A4BA256-DB
  Lattice — Field Programmable Gate Arrays - FPGAs Use ECP/EC or XP
• OR2C10A4BA256-DB
  Lattice — Field Programmable Gate Arrays - FPGAs 1024 LUT 256 I/O
• OR2T08A4BA256-DB
  Lattice — Field Programmable Gate Arrays - FPGAs Use ECP/EC or XP
• OR2T10A5BA256-DB
  Lattice — Field Programmable Gate Arrays - FPGAs 1024 LUT 244 I/O
• HB54A2568KN-A75B
  Elpida Memory — 256MB DDR SDRAM S.O.DIMM
• HB54A2568KN-B75B
  Elpida Memory — 256MB DDR SDRAM S.O.DIMM
• AS6UA25616-70BI
  Alliance Memory — Alliance Memory AS6UA25616-70BI Mfr Package Description: CSP, FBGA-48 Technology: CMOS Package Shape: RECTANGULAR Package Style: GRID ARRAY, THIN PROFILE, FINE PITCH Surface Mount: Yes Terminal Form: BALL Terminal Pitch: 0.7500 mm Terminal Finish: NOT SPECIFIED Terminal Position: BOTTOM Number of Functions: 1 Number of Terminals: 48 Package Body Material: PLASTIC/EPOXY Temperature Grade: INDUSTRIAL Memory Width: 16 Organization: 256K X 16 Memory Density: 4.19E6 deg Operating Mode: ASYNCHRONOUS Number of Words: 262144 words Number of Words Code: 256K Operating Temperature-Max: 85 Cel Operating Temperature-Min: -40 Cel Supply Voltage-Max (Vsup): 2.7 V Supply Voltage-Min (Vsup): 2.3 V Supply Voltage-Nom (Vsup): 2.5 V Memory IC Type: STANDARD SRAM Parallel/Serial: PARALLEL Access Time-Max (tACC): 70 ns