Результаты поиска IRF730

Найдено 116 результатов.

• IRF730ASTRL
  Vishay/Siliconix — Single-Gate MOSFET Transistors N-Chan 400V 5.5 Amp
• IRF7307QPBF
  International Rectifier — MOSFET, Power; Dual N-Ch & P-Ch; VDSS 20 V (N-Ch), -20 V (P-Ch); SO-8; PD 2W; -55degc
• IRF7304QPBF
  International Rectifier — MOSFET, Power; Dual P-Ch; VDSS -20V; RDS(ON) 0.09Ohm; ID -4.3A; SO-8; PD 2W; VGS +/-12V
• IRF7303QPBF
  International Rectifier — MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.05Ohm; ID 4.9A; SO-8; PD 2W; VGS +/-20V
• IRF7306QPBF
  International Rectifier — MOSFET, Power; Dual P-Ch; VDSS -30V; RDS(ON) 0.1Ohm; ID -3.6A; SO-8; PD 2W; VGS +/-20V
• IRF7309QPBF
  International Rectifier — MOSFET, DUAL N/P-CHANNEL, 30V, 4.0A, SO-8, Q101 QUALIFIED
• IRF730ASTRR
  International Rectifier — 400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
• IRF7309IPBF
  IR (International Rectifier) — IR (International Rectifier) IRF7309IPBF Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 4 A Resistance Drain-Source RDS (on): 80 mOhms Mounting Style: SMD/SMT Package / Case: SOIC-8 Gate Charge Qg: 16.7 nC Power Dissipation: 1.4 W
• IRF7309IPBF
  IR (International Rectifier) — IR (International Rectifier) IRF7309IPBF Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 4 A Resistance Drain-Source RDS (on): 80 mOhms Mounting Style: SMD/SMT Package / Case: SOIC-8 Gate Charge Qg: 16.7 nC Power Dissipation: 1.4 W
• IRF7303TRPBF
  International Rectifier — MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.05Ohm; ID 4.9A; SO-8; PD 2W; VGS +/-20V