Результаты поиска BSS123

Найдено 83 результатов.

• BSS123LT1D
  ON Semiconductor — Power MOSFET 170 mAmps/ 100 Volts
• BSS123,215
  NXP Semiconductors — NXP Semiconductors BSS123,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 0.15 A Current - Continuous Drain (id) @ 25В° C: 150mA Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Drain-source On-res: 6Ohm Drain-source On-volt: 100V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V Gate-source Voltage (max): В±20V ID_COMPONENTS: 1951763 Input Capacitance (ciss) @ Vds: 40pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: N Power - Max: 250mW Power Dissipation: 250 mW Rds On (max) @ Id, Vgs: 6 Ohm @ 120mA, 10V Resistance Drain-source Rds (on): 6 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Type: Power MOSFET Vgs(th) (max) @ Id: 2.8V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 6000 mOhms Factory Pack Quantity: 3000 Part # Aliases: BSS123 T/R Other Names: 568-4873-2, 933946340215, BSS123 T/R, BSS123,215
• BSS123,215
  NXP Semiconductors — NXP Semiconductors BSS123,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 0.15 A Current - Continuous Drain (id) @ 25В° C: 150mA Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Drain-source On-res: 6Ohm Drain-source On-volt: 100V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V Gate-source Voltage (max): В±20V ID_COMPONENTS: 1951763 Input Capacitance (ciss) @ Vds: 40pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: N Power - Max: 250mW Power Dissipation: 250 mW Rds On (max) @ Id, Vgs: 6 Ohm @ 120mA, 10V Resistance Drain-source Rds (on): 6 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Type: Power MOSFET Vgs(th) (max) @ Id: 2.8V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 6000 mOhms Factory Pack Quantity: 3000 Part # Aliases: BSS123 T/R Other Names: 568-4873-2, 933946340215, BSS123 T/R, BSS123,215
• BSS123,215
  NXP Semiconductors — NXP Semiconductors BSS123,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 0.15 A Current - Continuous Drain (id) @ 25В° C: 150mA Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Drain-source On-res: 6Ohm Drain-source On-volt: 100V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V Gate-source Voltage (max): В±20V ID_COMPONENTS: 1951763 Input Capacitance (ciss) @ Vds: 40pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: N Power - Max: 250mW Power Dissipation: 250 mW Rds On (max) @ Id, Vgs: 6 Ohm @ 120mA, 10V Resistance Drain-source Rds (on): 6 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Type: Power MOSFET Vgs(th) (max) @ Id: 2.8V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 6000 mOhms Factory Pack Quantity: 3000 Part # Aliases: BSS123 T/R Other Names: 568-4873-2, 933946340215, BSS123 T/R, BSS123,215
• LBSS123LT1
  LRC (Leshan Radio Company) —
• LBSS123LT1
  LRC (Leshan Radio Company) —
• BSS123W-13
  Diodes — Diodes BSS123W-13 Mfr Package Description: PLASTIC PACKAGE-3 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN LEAD Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1700 A Feedback Cap-Max (Crss): 6 pF DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 10 ohm
• BSS123Q-13
  Diodes — Diodes BSS123Q-13 Lead Free: Yes EU RoHS Compliant: Yes Terminal Finish: MATTE TIN Transistor Type: GENERAL PURPOSE SMALL SIGNAL
• LBSS123LT3
  LRC [Leshan Radio Company] — N-CHANNEL POWER MOSFET
• BSS123E6327
  Infineon Technologies — MOSFET N-CH 100V 170MA SOT-23