Результаты поиска BAV21

Найдено 95 результатов.

• BAV21WS-TP
  Micro Commercial Co — DIODE GP 250V 200MA SOD323
• BAV21WS-TP
  Micro Commercial Co — DIODE GP 250V 200MA SOD323
• BAV21_T50R
  Fairchild Semiconductor — DIODE GEN PURP 250V 200MA DO-35
• BAV21_T50A
  Fairchild Semiconductor — DIODE GEN PURP 250V 200MA DO-35
• BAV21_T26A
  Fairchild Semiconductor — DIODE GEN PURP 250V 200MA DO-35
• BAV21,143
  NXP Semiconductors — NXP Semiconductors BAV21,143 Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (io): 250mA (DC) Current - Reverse Leakage @ Vr: 100nA @ 200V Diode Type: Standard ID_COMPONENTS: 3594721 Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Reverse Recovery Time (trr): 50ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 200V Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA Other Names: 933189210143
• BAV21,143
  NXP Semiconductors — NXP Semiconductors BAV21,143 Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (io): 250mA (DC) Current - Reverse Leakage @ Vr: 100nA @ 200V Diode Type: Standard ID_COMPONENTS: 3594721 Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Reverse Recovery Time (trr): 50ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 200V Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA Other Names: 933189210143
• BAV21,133
  NXP Semiconductors — NXP Semiconductors BAV21,133 Capacitance @ Vr, F: 5pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 250mA (DC) Current - Reverse Leakage @ Vr: 100nA @ 200V Diode Type: Standard Forward Continuous Current: 250 mA Forward Voltage Drop: 1.25 V ID_COMPONENTS: 1942173 Max Surge Current: 625 mA Maximum Diode Capacitance: 5 pF Maximum Operating Temperature: + 175 C Maximum Power Dissipation: 400 mW Maximum Reverse Leakage Current: 100 nA Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Peak Reverse Voltage: 250 V Product: Switching Diodes Recovery Time: 50 ns Reverse Recovery Time (trr): 50ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 200V Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA Other Names: 933189210133
• BAV21,113
  NXP Semiconductors — NXP Semiconductors BAV21,113 Capacitance @ Vr, F: 5pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 250mA (DC) Current - Reverse Leakage @ Vr: 100nA @ 200V Diode Type: Standard Forward Continuous Current: 0.25 A Forward Voltage Drop: 1.25 V ID_COMPONENTS: 3594703 Max Surge Current: 9 A Maximum Operating Temperature: + 175 C Maximum Reverse Leakage Current: 0.1 uA Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Mounting Type: Through Hole Operating Temperature Range: + 175 C Package / Case: DO-204AH, DO-35, Axial Peak Reverse Voltage: 250 V Product: General Purpose Diodes Recovery Time: 50 ns Reverse Recovery Time (trr): 50ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 200V Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA Other Names: 933189210113, BAV21 T/R
• BAV21WS-H
  Formosa Microsemi — Formosa Microsemi BAV21WS-H Diode Type: SIGNAL DIODE