Результаты поиска 2N7000

Найдено 101 результатов.

• 2N7000_D26Z
  Fairchild Semiconductor — MOSFET N-CH 60V 200MA TO-92
• 2N7000_D74Z
  Fairchild Semiconductor — MOSFET N-CH 60V 200MA TO-92
• 2N7000_D75Z
  Fairchild Semiconductor — MOSFET N-CH 60V 200MA TO-92
• 2N7000RLRA
  ON Semiconductor — MOSFET N-CH 60V 200MA TO-92
• 2N7000RLRA
  ON Semiconductor — MOSFET N-CH 60V 200MA TO-92
• 2N7000ZL1G
  ON Semiconductor — Small Signal MOSFET 200 mAmps, 60 Volts
• 2N7000G_11
  ON Semiconductor —
• 2N7000,126
  NXP Semiconductors — NXP Semiconductors 2N7000,126 Current - Continuous Drain (id) @ 25В° C: 300mA Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Input Capacitance (ciss) @ Vds: 40pF @ 10V Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 830mW Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 2V @ 1mA Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 30 V Continuous Drain Current: 0.3 A Resistance Drain-Source RDS (on): 5000 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 830 mW Factory Pack Quantity: 2000 Other Names: 2N7000 AMO, 934003460126
• 2N7000J24Z
  Fairchild Semiconductor — Fairchild Semiconductor 2N7000J24Z Mfr Package Description: TO-92, 3 PIN Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.4000 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2000 A Feedback Cap-Max (Crss): 5 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 5 ohm
• 2N7000P007
  Supertex — Supertex 2N7000P007 Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Finish: TIN LEAD Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.4000 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2000 A Feedback Cap-Max (Crss): 5 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 5 ohm