Результаты поиска 1N5819

Найдено 146 результатов.

• 1N5819WB
  Semtech Corporation —
• 1N5819-1
  Microsemi Corporation — Microsemi Corporation 1N5819-1 Package Shape: ROUND Package Style: LONG FORM Terminal Form: WIRE Terminal Finish: TIN LEAD Terminal Position: AXIAL Number of Terminals: 2 Package Body Material: GLASS Technology: SCHOTTKY Configuration: SINGLE Case Connection: ISOLATED Number of Elements: 1 Diode Element Material: SILICON Diode Type: SIGNAL DIODE Average Forward Current-Max: 1 A
• 1N5819-1
  Microsemi Corporation — Microsemi Corporation 1N5819-1 Package Shape: ROUND Package Style: LONG FORM Terminal Form: WIRE Terminal Finish: TIN LEAD Terminal Position: AXIAL Number of Terminals: 2 Package Body Material: GLASS Technology: SCHOTTKY Configuration: SINGLE Case Connection: ISOLATED Number of Elements: 1 Diode Element Material: SILICON Diode Type: SIGNAL DIODE Average Forward Current-Max: 1 A
• 1N5819-E
  LRC (Leshan Radio Company) —
• 1N5819-E
  LRC (Leshan Radio Company) —
• 1N5819WS
  KEXIN Industrial —
• 1N5819WB
  EIC (Electronics Industry Company) —
• 1N5819/1
  Vishay Intertechnology — Vishay Intertechnology 1N5819/1 Configuration: Single Current Rating: 1A Forward Continuous Current: 1 A Forward Current If: 1A Forward Voltage Drop: 0.9 V at 3.1 A ID_COMPONENTS: 2670574 Leaded Process Compatible: No Max Surge Current: 25 A Maximum Reverse Leakage Current: 1000 uA Mounting Style: Through Hole Mounting Type: Through Hole Operating Temperature Range: - 65 C to + 125 C Package / Case: DO-204AL Peak Reflow Compatible (260 C): No Peak Reverse Voltage: 40 V Product: Schottky Diodes
• 1N5819A-G
  COMCHIP [Comchip Technology] — Schottky Barrier Rectifiers
• 1N5819B-G
  COMCHIP [Comchip Technology] — Schottky Barrier Rectifiers