Результаты поиска 2N7002

Найдено 622 результатов.

• 2N7002K-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology 2N7002K-T1-GE3 Continuous Drain Current: 300 mA Continuous Drain Current Id: 190mA Drain Source Voltage Vds: 60V Drain-source Breakdown Voltage: 60 V Forward Transconductance Gfs (max / Min): 100 mS Gate Charge Qg: 0.4 nC Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 2661676 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT On Resistance Rds(on): 2ohm Package / Case: SOT-23 Power Dissipation: 0.35 W Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 2 Ohms Threshold Voltage Vgs Typ: 1V Transistor Polarity: N-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 2 Ohms Configuration: Single Forward Transconductance gFS (Max / Min): 100 mS Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 35 ns Part # Aliases: 2N7002K-GE3
• 2N7002K-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology 2N7002K-T1-GE3 Continuous Drain Current: 300 mA Continuous Drain Current Id: 190mA Drain Source Voltage Vds: 60V Drain-source Breakdown Voltage: 60 V Forward Transconductance Gfs (max / Min): 100 mS Gate Charge Qg: 0.4 nC Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 2661676 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT On Resistance Rds(on): 2ohm Package / Case: SOT-23 Power Dissipation: 0.35 W Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 2 Ohms Threshold Voltage Vgs Typ: 1V Transistor Polarity: N-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 2 Ohms Configuration: Single Forward Transconductance gFS (Max / Min): 100 mS Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 35 ns Part # Aliases: 2N7002K-GE3
• 2N7002E-T1-GE3
  VPG (Vishay Precision Group) — VPG (Vishay Precision Group) 2N7002E-T1-GE3 Mfr Package Description: HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3500 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2400 A DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 3 ohm
• 2N7002DW H6327
  Infineon Technologies — MOSFET 2N-CH 60V 0.3A SOT363
• TSM2N7002KCXRF
  TSC [Taiwan Semiconductor Company, Ltd] — 60V N-Channel MOSFET
• 2N7002LLG-AE3-R
  LianShun Electronics —
• 2N7002LLK-AE3-R
  LianShun Electronics —
• MA2N7002E3K1000
  TXC Corporation — TXC Corporation MA2N7002E3K1000 N Channel Mosfet VGS (V): 20 Crss
• 2N7002LLG-AE2-R
  UTC (Unisonic Technologies Company) —
• 2N7002LLG-AE3-R
  UTC (Unisonic Technologies Company) —