Результаты поиска IRF730

Найдено 116 результатов.

• IRF7301PBF
  International Rectifier — MOSFET 2N-CH 20V 5.2A 8-SOIC
• IRF7307PBF
  International Rectifier — MOSFET N+P 20V 4.3A 8-SOIC
• IRF730STRR
  International Rectifier — 400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
• AUIRF7309Q
  IR (International Rectifier) — IR (International Rectifier) AUIRF7309Q RoHS: yes Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 4 A Resistance Drain-Source RDS (on): 80 mOhms Mounting Style: SMD/SMT Package / Case: SOIC-8 Gate Charge Qg: 16.7 nC Power Dissipation: 1.4 W Factory Pack Quantity: 95
• AUIRF7309Q
  IR (International Rectifier) — IR (International Rectifier) AUIRF7309Q RoHS: yes Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 4 A Resistance Drain-Source RDS (on): 80 mOhms Mounting Style: SMD/SMT Package / Case: SOIC-8 Gate Charge Qg: 16.7 nC Power Dissipation: 1.4 W Factory Pack Quantity: 95
• AUIRF7304Q
  IR (International Rectifier) — IR (International Rectifier) AUIRF7304Q Configuration: Dual Dual Drain Continuous Drain Current: 4.3 A Continuous Drain Current Id: -4.3A Drain Source Voltage Vds: -20V Drain-source Breakdown Voltage: 20 V Gate Charge Qg: 14.7 nC Gate-source Breakdown Voltage: +/- 12 V Minimum Operating Temperature: - 55 C Module Configuration: Dual P Channel Mounting Style: SMD/SMT On Resistance Rds(on): 0.09ohm Package / Case: SOIC N Power Dissipation: 2 W Rds(on) Test Voltage Vgs: -4.5V Resistance Drain-source Rds (on): 90 mOhms Rohs Compliant: Yes Transistor Polarity: Dual P Channel RoHS: yes Drain-Source Breakdown Voltage: - 20 V Gate-Source Breakdown Voltage: 12 V Resistance Drain-Source RDS (on): 140 mOhms Factory Pack Quantity: 95 Typical Turn-Off Delay Time: 51 ns
• AUIRF7303Q
  IR (International Rectifier) — IR (International Rectifier) AUIRF7303Q Configuration: Dual Dual Drain Continuous Drain Current: 4.9 A Continuous Drain Current Id: 4.9A Drain Source Voltage Vds: 30V Drain-source Breakdown Voltage: 30 V Gate Charge Qg: 16.7 nC Gate-source Breakdown Voltage: +/- 20 V Minimum Operating Temperature: - 55 C Module Configuration: Dual N Channel Mounting Style: SMD/SMT On Resistance Rds(on): 0.05ohm Package / Case: SOIC N Power Dissipation: 2 W Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 50 mOhms Rohs Compliant: Yes Transistor Polarity: Dual N Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 80 mOhms Factory Pack Quantity: 95 Typical Turn-Off Delay Time: 22 ns
• IRF730BPBF
  Vishay Semiconductors — Vishay Semiconductors IRF730BPBF Product Category: MOSFET Rohs: yes RoHS: yes
• IRF730ALPBF
  Vishay Semiconductors — Single-Gate MOSFET Transistors N-Chan 400V 5.5 Amp
• IRF730ASPBF
  Vishay Semiconductors — Single-Gate MOSFET Transistors N-Chan 400V 5.5 Amp