Результаты поиска BFS17

Найдено 74 результатов.

• BFS17LTA
  Zetex Semiconductors — Zetex Semiconductors BFS17LTA Collector- Base Voltage Vcbo: 25 V Collector- Emitter Voltage Vceo Max: 15 V Configuration: Single Dc Collector/base Gain Hfe Min: 25 at 2 mA at 1 V Dc Current Gain Hfe Max: 25 at 2 mA at 1 V Emitter- Base Voltage Vebo: 2.5 V Gain Bandwidth Product Ft: 1.3 GHz Maximum Dc Collector Current: 0.025 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: NPN Collector- Base Voltage VCBO: 25 V Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 2.5 V Maximum DC Collector Current: 0.025 A Gain Bandwidth Product fT: 1.3 GHz DC Collector/Base Gain hfe Min: 25 at 2 mA at 1 V DC Current Gain hFE Max: 25 at 2 mA at 1 V
• BFS17LTC
  Zetex Semiconductors — Zetex Semiconductors BFS17LTC Collector- Base Voltage Vcbo: 25 V Collector- Emitter Voltage Vceo Max: 15 V Configuration: Single Dc Collector/base Gain Hfe Min: 25 at 2 mA at 1 V Dc Current Gain Hfe Max: 25 at 2 mA at 1 V Emitter- Base Voltage Vebo: 2.5 V Gain Bandwidth Product Ft: 1.3 GHz Maximum Dc Collector Current: 0.025 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: NPN Collector- Base Voltage VCBO: 25 V Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 2.5 V Maximum DC Collector Current: 0.025 A Gain Bandwidth Product fT: 1.3 GHz DC Collector/Base Gain hfe Min: 25 at 2 mA at 1 V DC Current Gain hFE Max: 25 at 2 mA at 1 V
• BFS17LTC
  Zetex Semiconductors — Zetex Semiconductors BFS17LTC Collector- Base Voltage Vcbo: 25 V Collector- Emitter Voltage Vceo Max: 15 V Configuration: Single Dc Collector/base Gain Hfe Min: 25 at 2 mA at 1 V Dc Current Gain Hfe Max: 25 at 2 mA at 1 V Emitter- Base Voltage Vebo: 2.5 V Gain Bandwidth Product Ft: 1.3 GHz Maximum Dc Collector Current: 0.025 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: NPN Collector- Base Voltage VCBO: 25 V Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 2.5 V Maximum DC Collector Current: 0.025 A Gain Bandwidth Product fT: 1.3 GHz DC Collector/Base Gain hfe Min: 25 at 2 mA at 1 V DC Current Gain hFE Max: 25 at 2 mA at 1 V
• BFS17S_07
  INFINEON [Infineon Technologies AG] — NPN Silicon RF Transistor
• BFS17W_07
  INFINEON [Infineon Technologies AG] — NPN Silicon RF Transistor
• BFS17A T/R
  NXP — RF Transistors NPN 25MA 15V 3GHZ
• BFS17W T/R
  NXP — RF Transistors NPN 15V 1GHZ
• BFS17T116
  ROHM — Transistors NPN RF AMP
• BFS17P_07
  Infineon Technologies —
• BFS17NQTA
  Diodes — Diodes BFS17NQTA Lead Free: Yes EU RoHS Compliant: Yes Terminal Finish: MATTE TIN Transistor Type: RF SMALL SIGNAL