Результаты поиска BCP54

Найдено 59 результатов.

• BCP54BCP56
  Siemens — NPN Silicon AF Transistors (For AF driver and output stages High collector current)
• BCP54E6433
  Infineon Technologies —
• BCP54E6327
  Infineon Technologies —
• bcp54-l99z
  Fairchild Semiconductor —
• BCP54E-6327
  INFINEON [Infineon Technologies AG] — NPN Silicon AF Transistors
• BCP54-10T/R
  NXP Semiconductors — NXP Semiconductors BCP54-10T/R Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 63 Collector Current-Max (IC): 1 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 130 MHz
• BCP54ME6433
  Infineon Technologies —
• BCP54MBCP56M
  Siemens — NPN Silicon AF Transistors (For AF driver and output stages High collector current)
• BCP54-10,135
  NXP Semiconductors — NXP Semiconductors BCP54-10,135 Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Continuous Collector Current: 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 40 Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 180MHz Gain Bandwidth Product Ft: 180 MHz ID_COMPONENTS: 1950282 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1.5 A Maximum Operating Frequency: 180 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 960mW Power Dissipation: 0.96 W Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933917190135, BCP54-10 /T3
• BCP54-10 /T3
  NXP Semiconductors — NXP Semiconductors BCP54-10 /T3 Collector- Base Voltage Vcbo: 45 V Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 25 at 5 mA at 2 V Dc Current Gain Hfe Max: 100 at 150 mA at 2 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 4000 Gain Bandwidth Product Ft: 180 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 960 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SC-73 Part # Aliases: BCP54-10,135 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN