Результаты поиска BC817-40

Найдено 80 результатов.

• BC817-40LT3G
  ON Semiconductor — TRANSISTOR NPN 45V 500MA SOT-23
• BC817-40QAZ
  NXP Semiconductors — NXP Semiconductors BC817-40QAZ RoHS: yes Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 700 mV Maximum DC Collector Current: 500 mA Gain Bandwidth Product fT: 100 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DFN1010D-3 Brand: NXP Semiconductors Continuous Collector Current: 500 mA DC Collector/Base Gain hfe Min: 250 DC Current Gain hFE Max: 600 mA Maximum Power Dissipation: 900 mW Minimum Operating Temperature: - 55 C Factory Pack Quantity: 5000
• BC817-40-MR
  Infineon Technologies —
• BC817-40WRF
  TSC (Taiwan Semiconductor Corporation) —
• BC817-40/E8
  Vishay Intertechnology — Vishay Intertechnology BC817-40/E8 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 250 Collector Current-Max (IC): 0.8000 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 100 MHz
• BC817-40WT1
  Willas Electronic —
• SBC817-40LT3
  ONSEMI [ON Semiconductor] — General Purpose Transistors(NPN Silicon)???€?€
• BC81740NMMTF
  Fairchild Semiconductor — Small Signal Transistors NPN Si Transistor Epitaxial
• BC81740NMMTF
  Fairchild Semiconductor — TRANSISTOR NPN 45V 800MA SOT-23
• BC817-40S62Z
  Fairchild Semiconductor — Fairchild Semiconductor BC817-40S62Z Mfr Package Description: SOT-23, 3 PIN Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.3100 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 170 Collector Current-Max (IC): 0.8000 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 100 MHz