Результаты поиска BC639

Найдено 63 результатов.

• BC639_D27Z
  Fairchild Semiconductor — TRANSISTOR NPN 80V 1A TO-92
• BC639_D81Z
  Fairchild Semiconductor — TRANSISTOR NPN 80V 1A TO-92
• BC639_J35Z
  Fairchild Semiconductor — TRANS NPN EPTXL 80V 100MA TO-92
• BC639,126
  NXP Semiconductors — NXP Semiconductors BC639,126 Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 830mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Other Names: 933221940126, BC639 AMO
• BC639,116
  NXP Semiconductors — NXP Semiconductors BC639,116 Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 830mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Other Names: 933221940116, BC639 T/R
• BC639,112
  NXP Semiconductors — NXP Semiconductors BC639,112 Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 830mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Other Names: 933221940112, BC639P
• BC639/640
  American Microsemiconductor — American Microsemiconductor BC639/640 Transistor Type: GENERAL PURPOSE SMALL SIGNAL
• BC639-16ZL1
  ON Semiconductor — Transistors Bipolar- General Purpose 500mA 80V NPN
• BC639-16ZL1
  ON Semiconductor — TRANSISTOR NPN GP 80V 1A TO-92
• BC639-AMMO
  NXP Semiconductors — NXP Semiconductors BC639-AMMO Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.8000 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 25 Collector Current-Max (IC): 1 A Collector-emitter Voltage-Max: 80 V Transition Frequency-Nom (fT): 130 MHz