Результаты поиска 4N35S

Найдено 45 результатов.

• LTV-4N35S-TA1
  LITEON [Lite-On Technology Corporation] — Property of Lite-On Only
• 4N35S1(TA)-V
  Everlight Electronics Co Ltd — OPTOISO 5KV TRANS W/BASE 6SMD
• 4N35S1(TB)-V
  Everlight Electronics Co Ltd — OPTOISO 5KV TRANS W/BASE 6SMD
• 4N35SR2M_F132
  Fairchild Semiconductor — Fairchild Semiconductor 4N35SR2M_F132 Configuration: 1 Channel Current Transfer Ratio: 100 % Input Type: DC Maximum Collector Emitter Saturation Voltage: 300 mV Maximum Collector Emitter Voltage: 30 V Maximum Forward Diode Voltage: 1.5 V Maximum Input Diode Current: 60 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 250 mW Maximum Reverse Diode Voltage: 6 V Minimum Operating Temperature: - 40 C Output Device: Phototransistor Package / Case: SMT-6 Product Category: Transistor Output Optocouplers RoHS: yes Isolation Voltage: 7500 Vrms Number of Channels per Chip: 1 Channel Factory Pack Quantity: 1000
• 4N35SR2M_F132
  Fairchild Semiconductor — Fairchild Semiconductor 4N35SR2M_F132 Configuration: 1 Channel Current Transfer Ratio: 100 % Input Type: DC Maximum Collector Emitter Saturation Voltage: 300 mV Maximum Collector Emitter Voltage: 30 V Maximum Forward Diode Voltage: 1.5 V Maximum Input Diode Current: 60 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 250 mW Maximum Reverse Diode Voltage: 6 V Minimum Operating Temperature: - 40 C Output Device: Phototransistor Package / Case: SMT-6 Product Category: Transistor Output Optocouplers RoHS: yes Isolation Voltage: 7500 Vrms Number of Channels per Chip: 1 Channel Factory Pack Quantity: 1000