Результаты поиска 7625

Найдено 532 результатов.

• FXO-PC736-321.7625
  Fox Electronics — OSC 321.7625 MHZ 3.3V PECL SMD
• FXO-PC738-321.7625
  Fox Electronics — OSC 321.7625 MHZ 3.3V PECL SMD
• TPS77625QPWPRQ1
  Texas Instruments —
• MKP1847625254P2
  Roederstein — Roederstein MKP1847625254P2 Product Category: Film Capacitors RoHS: yes Product Type: AC Filter Dielectric: Polypropylene (PP) Capacitance: 25 uF Tolerance: 5 % Voltage Rating: 250 VAC Series: MKP1847 Operating Temperature Range: - 55 C to + 85 C Termination Style: Radial Lead Spacing: 37.5 mm Dimensions: 42 mm L x 30 mm W x 45 mm H Case Height: 45 mm Case Length: 42 mm Case Width: 30 mm Current Rating: 19 A Lead Diameter: 1 mm Load Life: 60000 hr Product: Metallized Polypropylene Capacitors Type: Metallized Polypropylene AC Film Capacitor Voltage Rating AC: 250 V Voltage Rating DC: 500 V
• AD7625BCPZ-RL71
  ADI (Analog Devices, Inc.) —
• 5962-9762501QXA
  TI (Texas Instruments) —
• MKP1847625354Y5
  Vishay Intertechnology — Vishay Intertechnology MKP1847625354Y5 Style: Metallized Polypropylene Capacitance: 25 ВµF Rated Voltage: 700 V Rated Voltage (VAC): 350 VAC Lead Spacing: 52.5 mm Tolerance (%): В±5 %
• SI7625DN-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI7625DN-T1-GE3 Continuous Drain Current: - 3 A Current - Continuous Drain (id) @ 25В° C: 35A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: - 30 V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 47 S Gate Charge (qg) @ Vgs: 126nC @ 10V Gate Charge Qg: 84.5 nC Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1716279 Input Capacitance (ciss) @ Vds: 4427pF @ 15V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 55 C Mounting Style: Screw Mounting Type: Surface Mount Package / Case: PowerPAKВ® 1212-8 Power - Max: 52W Power Dissipation: 3.7 W Rds On (max) @ Id, Vgs: 7 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 0.0056 Ohms Series: TrenchFETВ® Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 2.5V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 7 mOhms at 10 V Configuration: Single Forward Transconductance gFS (Max / Min): 47 S Part # Aliases: SI7625DN-GE3 Other Names: SI7625DN-T1-GE3TR
• SI7625DN-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI7625DN-T1-GE3 Continuous Drain Current: - 3 A Current - Continuous Drain (id) @ 25В° C: 35A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: - 30 V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 47 S Gate Charge (qg) @ Vgs: 126nC @ 10V Gate Charge Qg: 84.5 nC Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1716279 Input Capacitance (ciss) @ Vds: 4427pF @ 15V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 55 C Mounting Style: Screw Mounting Type: Surface Mount Package / Case: PowerPAKВ® 1212-8 Power - Max: 52W Power Dissipation: 3.7 W Rds On (max) @ Id, Vgs: 7 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 0.0056 Ohms Series: TrenchFETВ® Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 2.5V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 7 mOhms at 10 V Configuration: Single Forward Transconductance gFS (Max / Min): 47 S Part # Aliases: SI7625DN-GE3 Other Names: SI7625DN-T1-GE3TR
• IUGNF6-35176-25
  Sensata Technologies/Airpax — CIR BRKR MAG-HYDR LEVER