Результаты поиска 2N7002

Найдено 622 результатов.

• 2N7002G-AE3-R
  UTC (Unisonic Technologies Company) —
• 2N7002G-AL3-R
  UTC (Unisonic Technologies Company) —
• 2N7002L-AE3-R
  UTC (Unisonic Technologies Company) —
• 2N7002L-AL3-R
  UTC (Unisonic Technologies Company) —
• 2N7002L-AL3-R
  UTC (Unisonic Technologies Company) —
• 2N7002Z-AE3-R
  UTC (Unisonic Technologies Company) —
• 2N7002Z-AL3-R
  UTC (Unisonic Technologies Company) —
• 2N7002Z-AL6-R
  UTC (Unisonic Technologies Company) —
• 2N7002-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology 2N7002-T1-GE3 Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 40 V Continuous Drain Current: 0.115 A Resistance Drain-Source RDS (on): 7.5 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23-3 Forward Transconductance gFS (Max / Min): 80 mS Minimum Operating Temperature: - 55 C Power Dissipation: 0.2 W Factory Pack Quantity: 3000 Part # Aliases: 2N7002-GE3
• 2N7002TT1-1T2
  Vishay Intertechnology — Vishay Intertechnology 2N7002TT1-1T2 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN LEAD Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.2000 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1150 A Feedback Cap-Max (Crss): 5 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 7.5 ohm