Результаты поиска 2N7002

Найдено 622 результатов.

• 2N7002DWT/R13
  Pan Jit International —
• 2N7002BKW,115
  NXP Semiconductors — NXP Semiconductors 2N7002BKW,115 Configuration: Single Continuous Drain Current: 300 mA Current - Continuous Drain (id) @ 25В° C: 310mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 275mW Power Dissipation: 0.83 W Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 2.8 Ohms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.1V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 2.8 Ohms Maximum Operating Temperature: + 150 C Fall Time: 7 ns Forward Transconductance gFS (Max / Min): 550 mS Gate Charge Qg: 0.5 nC Minimum Operating Temperature: - 55 C Rise Time: 6 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 5 ns
• 2N7002BKW,115
  NXP Semiconductors — NXP Semiconductors 2N7002BKW,115 Configuration: Single Continuous Drain Current: 300 mA Current - Continuous Drain (id) @ 25В° C: 310mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 275mW Power Dissipation: 0.83 W Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 2.8 Ohms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.1V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 2.8 Ohms Maximum Operating Temperature: + 150 C Fall Time: 7 ns Forward Transconductance gFS (Max / Min): 550 mS Gate Charge Qg: 0.5 nC Minimum Operating Temperature: - 55 C Rise Time: 6 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 5 ns
• 2N7002BKV,115
  NXP Semiconductors — NXP Semiconductors 2N7002BKV,115 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 340 mA Resistance Drain-Source RDS (on): 1.6 Ohms Configuration: Dual Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-666-6 Fall Time: 7 nS Forward Transconductance gFS (Max / Min): 550 mS Gate Charge Qg: 0.5 nC Minimum Operating Temperature: - 55 C Power Dissipation: 525 mW Rise Time: 6 nS Factory Pack Quantity: 4000 Typical Turn-Off Delay Time: 12 nS
• 2N7002BKT,115
  NXP Semiconductors — NXP Semiconductors 2N7002BKT,115 Configuration: Single Continuous Drain Current: 290 mA Current - Continuous Drain (id) @ 25В° C: 290mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: EMT3 (SOT-416, SC-75-3) Power - Max: 260mW Power Dissipation: 260 mW Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 2 Ohms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.1V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 2 Ohms Maximum Operating Temperature: + 150 C Fall Time: 7 ns Forward Transconductance gFS (Max / Min): 550 mS Gate Charge Qg: 0.5 nC Minimum Operating Temperature: - 55 C Rise Time: 6 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 5 ns
• 2N7002BKS,115
  NXP Semiconductors — NXP Semiconductors 2N7002BKS,115 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Continuous Drain Current: 300 mA Resistance Drain-Source RDS (on): 2.8 Ohms Configuration: Single Mounting Style: SMD/SMT Package / Case: SOT-23 Power Dissipation: 0.83 W Factory Pack Quantity: 3000
• 2N7002BKM,315
  NXP Semiconductors — NXP Semiconductors 2N7002BKM,315 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Continuous Drain Current: 450 mA Resistance Drain-Source RDS (on): 2.8 Ohms Configuration: Single Mounting Style: SMD/SMT Package / Case: SOT-23 Power Dissipation: 0.83 W Factory Pack Quantity: 10000
• TSM2N7002ECU6
  TSC (Taiwan Semiconductor Corporation) — TSC (Taiwan Semiconductor Corporation) TSM2N7002ECU6 Factory Pack Quantity: 3000 Part # Aliases: RF Product Category: MOSFET Rohs: yes RoHS: yes
• TSM2N7002ECU6
  TSC (Taiwan Semiconductor Corporation) — TSC (Taiwan Semiconductor Corporation) TSM2N7002ECU6 Factory Pack Quantity: 3000 Part # Aliases: RF Product Category: MOSFET Rohs: yes RoHS: yes
• 2N7002G-AE2-R
  UTC (Unisonic Technologies Company) —