Результаты поиска 6065

Найдено 510 результатов.

• BUK9606-55A,118
  NXP Semiconductors — NXP Semiconductors BUK9606-55A,118 Configuration: Single Continuous Drain Current: 154 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1951459 Input Capacitance (ciss) @ Vds: 8600pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0058 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.0058 Ohms Fall Time: 235 ns Rise Time: 180 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 420 ns Part # Aliases: /T3 BUK9606-55A Other Names: 934055414118, BUK9606-55A /T3
• BUK9606-55A,118
  NXP Semiconductors — NXP Semiconductors BUK9606-55A,118 Configuration: Single Continuous Drain Current: 154 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1951459 Input Capacitance (ciss) @ Vds: 8600pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0058 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.0058 Ohms Fall Time: 235 ns Rise Time: 180 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 420 ns Part # Aliases: /T3 BUK9606-55A Other Names: 934055414118, BUK9606-55A /T3
• BUK9606-55A /T3
  NXP Semiconductors — NXP Semiconductors BUK9606-55A /T3 Configuration: Single Continuous Drain Current: 154 A Drain-source Breakdown Voltage: 55 V Factory Pack Quantity: 800 Fall Time: 235 ns Gate-source Breakdown Voltage: +/- 15 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-404 Part # Aliases: BUK9606-55A,118 Power Dissipation: 300 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.0058 Ohms Rise Time: 180 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 420 ns
• BUK7606-55B,118
  NXP Semiconductors — NXP Semiconductors BUK7606-55B,118 Configuration: Single Continuous Drain Current: 154 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 64nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950618 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 254W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 6 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0063 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0063 Ohms Fall Time: 110 ns Rise Time: 115 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 155 ns Part # Aliases: /T3 BUK7606-55B Other Names: 934057692118::BUK7606-55B /T3::BUK7606-55B /T3
• BUK7606-55A,118
  NXP Semiconductors — NXP Semiconductors BUK7606-55A,118 Configuration: Single Continuous Drain Current: 154 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 6000pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 300W Power Dissipation: 300 W Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0063 Ohms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0063 Ohms Fall Time: 110 ns Rise Time: 115 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 155 ns Part # Aliases: /T3 BUK7606-55A Other Names: 934055413118, BUK7606-55A /T3
• BUK7606-55A,118
  NXP Semiconductors — NXP Semiconductors BUK7606-55A,118 Configuration: Single Continuous Drain Current: 154 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 6000pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 300W Power Dissipation: 300 W Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0063 Ohms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0063 Ohms Fall Time: 110 ns Rise Time: 115 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 155 ns Part # Aliases: /T3 BUK7606-55A Other Names: 934055413118, BUK7606-55A /T3
• BUK7606-55A /T3
  NXP Semiconductors — NXP Semiconductors BUK7606-55A /T3 Configuration: Single Continuous Drain Current: 154 A Drain-source Breakdown Voltage: 55 V Factory Pack Quantity: 800 Fall Time: 110 ns Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-404 Part # Aliases: BUK7606-55A,118 Power Dissipation: 300 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.0063 Ohms Rise Time: 115 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 155 ns
• M16065EJ3V0DS00
  NEC Electronics —
• 2455R2606580001
  Honeywell International — Honeywell International 2455R2606580001 Function: Opens on Rise Lead Free Status / Rohs Status: Lead free / RoHS Compliant Product: Temperature Sensors Supply Current: 15 A / 10 A Supply Voltage: 120 VAC / 250 VAC Temperature Range: 0 C to + 150 C
• 670-001R06-06-5
  Glenair — Glenair 670-001R06-06-5 Product Type: Dustcaps