Результаты поиска MJE13005

Найдено 38 результатов.

  • UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
  • UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
  • UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
  • UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
  • UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
  • UTC [Unisonic Technologies] — NPN SILICON POWER TRANSISTORS
  • Central Semiconductor — Power Transistors NPN Fast SW
  • Central Semiconductor — Central Semiconductor MJE13005 LEADFREE Collector- Base Voltage Vcbo: 9 V Collector- Emitter Voltage Vceo Max: 400 V Collector-emitter Saturation Voltage: 400 V Continuous Collector Current: 4 A Dc Collector/base Gain Hfe Min: 10 Emitter- Base Voltage Vebo: 9 V Factory Pack Quantity: 400 Gain Bandwidth Product Ft: 4 MHz Maximum Dc Collector Current: 4 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 75 W Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Package / Case: TO-220AB Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 9 V Collector- Emitter Voltage VCEO Max: 400 V Emitter- Base Voltage VEBO: 9 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 4 A Gain Bandwidth Product fT: 4 MHz DC Collector/Base Gain hfe Min: 10




Электронные компоненты и радиодетали - Подробный каталог компонентов с фото, наличием и ценой. Удобный поиск. Экспресс доставка.
Подробный каталог компонентов с фото, наличием и ценой. Удобный поиск. Экспресс доставка.