Результаты поиска IRF1404

Найдено 43 результатов.

• IRF1404ZSPBF
  International Rectifier — MOSFET N-CH 40V 75A D2PAK
• IRF1404ZSTRL
  International Rectifier — MOSFET N-CH 40V 75A D2PAK
• IRF1404ZSTRR
  International Rectifier — MOSFET N-CH 40V 75A D2PAK
• AUIRF1404STRL
  IR (International Rectifier) — IR (International Rectifier) AUIRF1404STRL RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 162 A Resistance Drain-Source RDS (on): 4 mOhms Configuration: Single Mounting Style: SMD/SMT Package / Case: D2PAK Gate Charge Qg: 160 nC Minimum Operating Temperature: - 55 C Power Dissipation: 200 W Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 72 ns
• IRF1404STRRPBF
  International Rectifier — MOSFET N-CH 40V 162A D2PAK
• IRF1404STRLPBF
  International Rectifier — MOSFET N-CH 40V 162A D2PAK
• IRF1404STRLPBF
  International Rectifier — MOSFET N-CH 40V 162A D2PAK
• IRF1404STRLPBF
  International Rectifier — MOSFET N-CH 40V 162A D2PAK
• AUIRF1404ZSTRR
  IR (International Rectifier) — IR (International Rectifier) AUIRF1404ZSTRR Current - Continuous Drain (id) @ 25В° C: 160A Drain To Source Voltage (vdss): 40V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 150nC @ 10V Input Capacitance (ciss) @ Vds: 4340pF @ 25V Mounting Type: Surface Mount Package / Case: TO-263-3, DВІPak (2 leads + Tab), TO-263AB Power - Max: 200W Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 180 A Resistance Drain-Source RDS (on): 3.7 mOhms Configuration: Single Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 200 W Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 36 ns
• AUIRF1404ZSTRL
  IR (International Rectifier) — IR (International Rectifier) AUIRF1404ZSTRL Current - Continuous Drain (id) @ 25В° C: 160A Drain To Source Voltage (vdss): 40V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 150nC @ 10V Input Capacitance (ciss) @ Vds: 4340pF @ 25V Mounting Type: Surface Mount Package / Case: TO-263-3, DВІPak (2 leads + Tab), TO-263AB Power - Max: 200W Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 180 A Resistance Drain-Source RDS (on): 3.7 mOhms Configuration: Single Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 200 W Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 36 ns