Результаты поиска BCX17
Найдено 37 результатов.
- NXP Semiconductors — NXP Semiconductors BCX17,235 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 80MHz Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 620mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933209620235, BCX17 /T3
- NXP Semiconductors — NXP Semiconductors BCX17,215 Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 80MHz ID_COMPONENTS: 1949738 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.5 A Maximum Operating Frequency: 80 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 620mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 80 MHz DC Collector/Base Gain hfe Min: 100 at 100 mA at 1 V, 70 at 300 mA at 1 V, 40 at 500 mA at 1 V DC Current Gain hFE Max: 100 at 100 mA at 1 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: BCX17 T/R Other Names: 568-1640-2, 933209620215, BCX17 T/R
- NXP Semiconductors — NXP Semiconductors BCX17,215 Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 80MHz ID_COMPONENTS: 1949738 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.5 A Maximum Operating Frequency: 80 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 620mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 80 MHz DC Collector/Base Gain hfe Min: 100 at 100 mA at 1 V, 70 at 300 mA at 1 V, 40 at 500 mA at 1 V DC Current Gain hFE Max: 100 at 100 mA at 1 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: BCX17 T/R Other Names: 568-1640-2, 933209620215, BCX17 T/R
- NXP Semiconductors — NXP Semiconductors BCX17 /T3 Collector- Base Voltage Vcbo: 50 V Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 100 at 100 mA at 1 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 10000 Gain Bandwidth Product Ft: 80 MHz Maximum Dc Collector Current: 0.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-23 Part # Aliases: BCX17,235 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: PNP
- NXP Semiconductors —
- ON Semiconductor — TRANS PNP 45V 0.5A SOT23
- NXP Semiconductors — NXP Semiconductors BCX17-25R-TAPE-13 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 0.2500 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 40 Collector Current-Max (IC): 0.5000 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 80 MHz
