Результаты поиска BCP54

Найдено 59 результатов.

• BCP54,135
  NXP Semiconductors — NXP Semiconductors BCP54,135 Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 960mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933917180135, BCP54 /T3
• BCP54,115
  NXP Semiconductors — NXP Semiconductors BCP54,115 Collector Current (dc) (max): 1A Collector- Emitter Voltage Vceo Max: 45 V Collector-base Voltage(max): 45V Collector-emitter Voltage: 45V Configuration: Single Continuous Collector Current: 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 63 Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V Dc Current Gain (min): 63 Emitter- Base Voltage Vebo: 5 V Emitter-base Voltage (max): 5V Frequency (max): 180MHz Frequency - Transition: 180MHz ID_COMPONENTS: 1949238 Lead Free Status / Rohs Status: Compliant Maximum Dc Collector Current: 1.5 A Maximum Operating Frequency: 180 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Package Type: SOT-223 Pin Count: 3 +Tab Power - Max: 960mW Power Dissipation: 0.96 W Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933917180115::BCP54 T/R::BCP54 T/R
• BCP54S62Z
  Fairchild Semiconductor — Fairchild Semiconductor BCP54S62Z Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 1.5 W Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 25 Collector Current-Max (IC): 1.5 A Collector-emitter Voltage-Max: 45 V
• BCP5416TA
  Diodes — Diodes BCP5416TA Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 45 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 100 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C
• BCP54S62Z
  TI (Texas Instruments) — Fairchild Semiconductor BCP54S62Z Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 1.5 W Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 25 Collector Current-Max (IC): 1.5 A Collector-emitter Voltage-Max: 45 V
• BCP5410TC
  Zetex Semiconductors — Zetex Semiconductors BCP5410TC Collector- Base Voltage Vcbo: 45 V Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 63 at 150 mA at 2 V Dc Current Gain Hfe Max: 63 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 45 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V DC Current Gain hFE Max: 63
• BCP5410TC
  Zetex Semiconductors — Zetex Semiconductors BCP5410TC Collector- Base Voltage Vcbo: 45 V Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 63 at 150 mA at 2 V Dc Current Gain Hfe Max: 63 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 45 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V DC Current Gain hFE Max: 63
• BCP5416TC
  Zetex Semiconductors — Zetex Semiconductors BCP5416TC Collector- Base Voltage Vcbo: 45 V Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 100 at 150 mA at 2V Dc Current Gain Hfe Max: 100 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 45 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2V DC Current Gain hFE Max: 100
• BCP5416TC
  Zetex Semiconductors — Zetex Semiconductors BCP5416TC Collector- Base Voltage Vcbo: 45 V Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 100 at 150 mA at 2V Dc Current Gain Hfe Max: 100 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: NPN Collector- Base Voltage VCBO: 45 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2V DC Current Gain hFE Max: 100
• BCP54-16 T/R
  NXP — Transistors - Arrays TRANS MED PWR TAPE-7