Результаты поиска BCP52

Найдено 49 результатов.

• BCP5210TC
  Zetex Semiconductors — Zetex Semiconductors BCP5210TC Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Dc Collector/base Gain Hfe Min: 63 at 150 mA at 2 V Dc Current Gain Hfe Max: 63 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: PNP
• BCP5216TC
  Zetex Semiconductors — Zetex Semiconductors BCP5216TC Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Dc Collector/base Gain Hfe Min: 100 at 150 mA at 2V Dc Current Gain Hfe Max: 100 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2V DC Current Gain hFE Max: 100
• BCP5216TC
  Zetex Semiconductors — Zetex Semiconductors BCP5216TC Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Dc Collector/base Gain Hfe Min: 100 at 150 mA at 2V Dc Current Gain Hfe Max: 100 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2V DC Current Gain hFE Max: 100
• BCP52E6327
  Infineon Technologies —
• BCP52E6433
  Infineon Technologies —
• BCP52-16TC
  Diodes — Diodes BCP52-16TC Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 2 W Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 100 Collector Current-Max (IC): 1 A Collector-emitter Voltage-Max: 60 V Transition Frequency-Nom (fT): 125 MHz
• BCP52-16T/R
  NXP Semiconductors — NXP Semiconductors BCP52-16T/R Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Element Material: SILICON Transistor Polarity: PNP Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 100 Collector Current-Max (IC): 1 A Collector-emitter Voltage-Max: 60 V Transition Frequency-Nom (fT): 115 MHz
• BCP52ME6433
  Infineon Technologies —
• BCP52-10,135
  NXP Semiconductors — Philips Semiconductors BCP52-10,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: - 60 V Collector- Emitter Voltage VCEO Max: - 60 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 1.5 A Gain Bandwidth Product fT: 145 MHz DC Collector/Base Gain hfe Min: 40 Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 Continuous Collector Current: - 1 A DC Current Gain hFE Max: 250 Maximum Power Dissipation: 1 W Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: /T3 BCP52-10
• BCP52-10 /T3
  NXP Semiconductors — NXP Semiconductors BCP52-10 /T3 Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Dc Collector/base Gain Hfe Min: 63 at 150 mA at 2 V Dc Current Gain Hfe Max: 63 at 150 mA at 2 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 4000 Gain Bandwidth Product Ft: 145 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1000 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SC-73 Part # Aliases: BCP52-10,135 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: PNP