Результаты поиска BC546B
Найдено 41 результатов.
- ON Semiconductor — Transistors Bipolar- General Purpose 100mA 80V NPN
- ON Semiconductor — Transistors Bipolar- General Purpose 100mA 80V NPN
- Fairchild Semiconductor — TRANS NPN EPTXL 65V 100MA TO-92
- ON Semiconductor — TRANS NPN GP 65V 100MA TO-92
- ON Semiconductor — TRANS NPN GP 65V 100MA TO-92
- ON Semiconductor —
- ON Semiconductor — ON Semiconductor BC546BRLRE Mfr Package Description: TO-226AA, 3 PIN Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Finish: TIN LEAD Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.6250 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 200 Collector Current-Max (IC): 0.1000 A Collector-emitter Voltage-Max: 65 V Transition Frequency-Nom (fT): 300 MHz
- NXP Semiconductors — NXP Semiconductors BC546B,126 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 65V Other Names: 933237780126, BC546B AMO
- NXP Semiconductors — NXP Semiconductors BC546B,116 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 65V Other Names: 933237780116, BC546B T/R
- Fairchild Semiconductor — Fairchild Semiconductor BC546B_D74Z Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 65 V Configuration: Single Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V Emitter- Base Voltage Vebo: 6 V Gain Bandwidth Product Ft: 300 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 500 mW Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: NPN