Результаты поиска 2N7002

Найдено 622 результатов.

• SF242N700200
  Shield —
• 2N7002KDW_10
  Pan Jit International —
• 2N7002DWT/R7
  Pan Jit International —
• 2N7002PS,125
  NXP Semiconductors — NXP Semiconductors 2N7002PS,125 Continuous Drain Current: 320 mA Drain-source Breakdown Voltage: 60 V Factory Pack Quantity: 3000 Forward Transconductance Gfs (max / Min): 400 mS Gate Charge Qg: 0.8 nC Mounting Style: SMD/SMT Package / Case: SOT-363 Power Dissipation: 280 mW Resistance Drain-source Rds (on): 1.6 Ohms Rohs: yes Transistor Polarity: N-Channel
• 2N7002CK,215
  NXP Semiconductors — NXP Semiconductors 2N7002CK,215 Current - Continuous Drain (id) @ 25В° C: 300mA Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 1.3nC @ 4.5V ID_COMPONENTS: 1952176 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 350mW Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Series: - Vgs(th) (max) @ Id: 2.5V @ 250ВµA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 300 mA Resistance Drain-Source RDS (on): 1.6 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 350 mW Factory Pack Quantity: 3000 Other Names: 934063611215
• 2N7002BK,215
  NXP Semiconductors — NXP Semiconductors 2N7002BK,215 Configuration: Single Continuous Drain Current: 300 mA Current - Continuous Drain (id) @ 25В° C: 350mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 370mW Power Dissipation: 0.83 W Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 2.8 Ohms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.1V @ 250ВµA
• L2N7002SLT1G
  LRC (Leshan Radio Company) —
• L2N7002SLT3G
  LRC (Leshan Radio Company) —
• SOT23 2N7002
  Infineon Technologies —
• TSM2N7002ECU
  TSC (Taiwan Semiconductor Corporation) — TSC (Taiwan Semiconductor Corporation) TSM2N7002ECU Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 0.3 A Resistance Drain-Source RDS (on): 3000 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-323-3 Fall Time: 6 ns Minimum Operating Temperature: - 55 C Power Dissipation: 350 mW Rise Time: 6 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 7.5 ns Part # Aliases: RF