Результаты поиска DB3

Найдено 1696 результатов.

• KSDB314SP
  SSAC —
• KSDB312SN
  SSAC —
• HRDB3160M
  SSAC —
• EVQP6DB35
  Panasonic Corporation —
• SDB310WKU
  KODENSHI Corporation —
• SDB310WAU
  KODENSHI Corporation —
• ics9db306
  IDT (Integrated Device Technology) —
• ICS9DB306
  ICS (Integrated Circuit Systems) —
• DB3-102LF
  Gowanda Electronics —
• FDB38N30U
  Fairchild Semiconductor — Fairchild Semiconductor FDB38N30U Configuration: Single Continuous Drain Current: 38 A Drain-source Breakdown Voltage: 300 V Fall Time: 62 ns Forward Transconductance Gfs (max / Min): 30 S Gate Charge Qg: 56 nC Gate-source Breakdown Voltage: 30 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: D2PAK Power Dissipation: 313 W Resistance Drain-source Rds (on): 0.103 Ohms Rise Time: 80 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 133 ns RoHS: yes Drain-Source Breakdown Voltage: 300 V Gate-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.103 Ohms Forward Transconductance gFS (Max / Min): 30 S Typical Turn-Off Delay Time: 133 ns