Результаты поиска 2N7002

Найдено 622 результатов.

• 2N7002T,215
  NXP Semiconductors — NXP Semiconductors 2N7002T,215 Current - Continuous Drain (id) @ 25?° C: 300mA Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Input Capacitance (ciss) @ Vds: 40pF @ 10V Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 830mW Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Series: - Vgs(th) (max) @ Id: 2.5V @ 1mA Other Names: 2N7002T T/R, 934055796215
• 2N7002P,215
  NXP Semiconductors — NXP Semiconductors 2N7002P,215 Configuration: Single Continuous Drain Current: 0.36 A Current - Continuous Drain (id) @ 25?° C: 300mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V Gate Charge Qg: 0.6 nC Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951766 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 420 mW Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.4V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 1.3 Ohms Fall Time: 4 ns Rise Time: 4 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 10 ns Other Names: 934064132215
• 2N7002F,215
  NXP Semiconductors — NXP Semiconductors 2N7002F,215 Configuration: Single Continuous Drain Current: 0.475 A Current - Continuous Drain (id) @ 25?° C: 475mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.69nC @ 10V Gate-source Breakdown Voltage: +/- 30 V ID_COMPONENTS: 1951786 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 830mW Power Dissipation: 830 mW Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 2 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 2000 mOhms Factory Pack Quantity: 3000 Part # Aliases: 2N7002F T/R Other Names: 2N7002F T/R::2N7002F T/R-ND::934056997215
• 2N7002F,215
  NXP Semiconductors — NXP Semiconductors 2N7002F,215 Configuration: Single Continuous Drain Current: 0.475 A Current - Continuous Drain (id) @ 25?° C: 475mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.69nC @ 10V Gate-source Breakdown Voltage: +/- 30 V ID_COMPONENTS: 1951786 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 830mW Power Dissipation: 830 mW Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 2 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 2000 mOhms Factory Pack Quantity: 3000 Part # Aliases: 2N7002F T/R Other Names: 2N7002F T/R::2N7002F T/R-ND::934056997215
• 2N7002E,215
  NXP Semiconductors — NXP Semiconductors 2N7002E,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 0.385 A Current - Continuous Drain (id) @ 25?° C: 385mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Drain-source On-res: 3Ohm Drain-source On-volt: 60V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.69nC @ 10V Gate-source Breakdown Voltage: +/- 30 V Gate-source Voltage (max): ?±30V ID_COMPONENTS: 1951753 Input Capacitance (ciss) @ Vds: 50pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: N Power - Max: 830mW Power Dissipation: 830 mW Rds On (max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 5.5 Ohm @ 10 V Series: - Transistor Polarity: N-Channel Type: Power MOSFET Vgs(th) (max) @ Id: 2.5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 3000 mOhms Factory Pack Quantity: 3000 Part # Aliases: 2N7002E T/R Other Names: 2N7002E T/R, 2N7002E,215, 568-4858-2, 934056996215
• 2N7002DW_11
  MCC (Micro Commercial Components) —
• L2N7002WT3G
  LRC (Leshan Radio Company) —
• L2N7002WT1G
  LRC (Leshan Radio Company) —
• L2N7002WT3G
  LRC (Leshan Radio Company) —
• L2N7002WT1G
  LRC (Leshan Radio Company) —