Результаты поиска SMBJ10

Найдено 392 результатов.

  • Vishay Semiconductors — Vishay Semiconductors SMBJ10HE3/2C Breakdown Voltage: 11.1 V Channels: 1 Channel Clamping Voltage: 18.8 V Dimensions: 3.94(Max) mm W x 4.57(Max) mm L Factory Pack Quantity: 750 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Operating Voltage: 10 V Package / Case: DO-214AA Peak Pulse Power Dissipation: 600 W Peak Surge Current: 100 A Polarity: Unidirectional Product Category: TVS Diodes - Transient Voltage Suppressors Rohs: yes Termination Style: SMD/SMT Tradename: TRANSZORB
  • Vishay Semiconductors — Vishay Semiconductors SMBJ10HE3/55 Breakdown Voltage: 11.1 V Channels: 1 Channel Clamping Voltage: 18.8 V Dimensions: 3.94(Max) mm W x 4.57(Max) mm L Factory Pack Quantity: 3200 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Operating Voltage: 10 V Package / Case: DO-214AA Peak Pulse Power Dissipation: 600 W Peak Surge Current: 100 A Polarity: Unidirectional Product Category: TVS Diodes - Transient Voltage Suppressors Rohs: yes Termination Style: SMD/SMT Tradename: TRANSZORB
  • Littelfuse Inc — TVS DIODE 100VWM 162VC
  • Littelfuse Inc — TVS DIODE 10VWM 17VC
  • Microsemi HI-REL [MIL] — TVS DIODE 100VWM 162VC DO214AA
  • Microsemi HI-REL [MIL] — TVS DIODE 100VWM 162VC DO214AA
  • Microsemi HI-REL [MIL] — TVS DIODE 10VWM 17VC DO214AA
  • Microsemi HI-REL [MIL] — TVS DIODE 10VWM 17VC DO214AA
  • Microsemi HI-REL [MIL] — TVS DIODE 100VWM 162VC DO214AA
  • Microsemi HI-REL [MIL] — TVS DIODE 100VWM 162VC DO214AA