Результаты поиска PTC8

Найдено 51 результатов.

• APTC80H29T3G
  Microsemi Corporation — Microsemi Corporation APTC80H29T3G Current - Continuous Drain (id) @ 25В° C: 15A Drain To Source Voltage (vdss): 800V Fet Feature: Standard Fet Type: 4 N-Channel (H-Bridge) Gate Charge (qg) @ Vgs: 90nC @ 10V Input Capacitance (ciss) @ Vds: 2254pF @ 25V Mounting Type: Chassis Mount Package / Case: SP3 Power - Max: 156W Rds On (max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Series: - Vgs(th) (max) @ Id: 3.9V @ 1mA
• APTC80H29T1G
  Microsemi Corporation — Microsemi Corporation APTC80H29T1G Current - Continuous Drain (id) @ 25В° C: 15A Drain To Source Voltage (vdss): 800V Fet Feature: Standard Fet Type: 4 N-Channel (H-Bridge) Gate Charge (qg) @ Vgs: 90nC @ 10V Input Capacitance (ciss) @ Vds: 2254pF @ 25V Mounting Type: Chassis Mount Package / Case: SP1 Power - Max: 156W Rds On (max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Series: - Vgs(th) (max) @ Id: 3.9V @ 1mA
• APTC80H29SCT
  Microsemi Corporation —
• APTC80H15T3G
  Microsemi Corporation — Microsemi Corporation APTC80H15T3G Current - Continuous Drain (id) @ 25В° C: 28A Drain To Source Voltage (vdss): 800V Fet Feature: Standard Fet Type: 4 N-Channel (H-Bridge) Gate Charge (qg) @ Vgs: 180nC @ 10V Input Capacitance (ciss) @ Vds: 4507pF @ 25V Mounting Type: Chassis Mount Package / Case: SP3 Power - Max: 277W Rds On (max) @ Id, Vgs: 150 mOhm @ 14A, 10V Series: - Vgs(th) (max) @ Id: 3.9V @ 2mA
• APTC80H15T1G
  Microsemi Corporation — Microsemi Corporation APTC80H15T1G Current - Continuous Drain (id) @ 25В° C: 28A Drain To Source Voltage (vdss): 800V Fet Feature: Standard Fet Type: 4 N-Channel (H-Bridge) Gate Charge (qg) @ Vgs: 180nC @ 10V Input Capacitance (ciss) @ Vds: 4507pF @ 25V Mounting Type: Chassis Mount Package / Case: SP1 Power - Max: 277W Rds On (max) @ Id, Vgs: 150 mOhm @ 14A, 10V Series: - Vgs(th) (max) @ Id: 3.9V @ 2mA
• APTC80A15T1G
  Microsemi Corporation — Microsemi Corporation APTC80A15T1G Current - Continuous Drain (id) @ 25В° C: 28A Drain To Source Voltage (vdss): 800V Fet Feature: Standard Fet Type: 2 N-Channel (Half Bridge) Gate Charge (qg) @ Vgs: 180nC @ 10V Input Capacitance (ciss) @ Vds: 4507pF @ 25V Mounting Type: Chassis Mount Package / Case: SP1 Power - Max: 277W Rds On (max) @ Id, Vgs: 150 mOhm @ 14A, 10V Series: - Vgs(th) (max) @ Id: 3.9V @ 2mA
• APTC80A10SCT
  Microsemi Corporation — Microsemi Corporation APTC80A10SCT Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: UNSPECIFIED Terminal Position: UPPER Number of Terminals: 10 Package Body Material: UNSPECIFIED Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Case Connection: ISOLATED Number of Elements: 2 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 43 A DS Breakdown Voltage-Min: 800 V Avalanche Energy Rating (Eas): 670 mJ Drain-source On Resistance-Max: 0.1000 ohm Pulsed Drain Current-Max (IDM): 172 A
• APTC80TDU15P
  APT (Advanced Power Technology) —
• APTC80H29SCT
  APT (Advanced Power Technology) —
• APTC80AM75SC
  APT (Advanced Power Technology) —