Результаты поиска MJD117

Найдено 31 результатов.

• MJD117RLG
  ON Semiconductor — Voltage Reference BIP DPAK PNP 2A 100V TR
• MJD117-001
  ON Semiconductor — Transistors Bipolar - Darlington 2A 100V Bipolar
• MJD117T4G
  ON Semiconductor — TRANS DARL PNP 2A 100V DPAK
• MJD117T4G
  ON Semiconductor — TRANS DARL PNP 2A 100V DPAK
• MJD117T4G
  ON Semiconductor — TRANS DARL PNP 2A 100V DPAK
• MJD117RLG
  ON Semiconductor — TRANS DARL PNP 2A 100V DPAK-4
• MJD117-001
  ON Semiconductor — TRANS DARL PNP 2A 100V DPAK-3
• MJD117_NL
  Fairchild Semiconductor — Fairchild Semiconductor MJD117_NL Base-emitter Saturation Voltage (max): 4@40mA@4AV Collector-base Voltage(max): 100V Collector-emitter Saturation Voltage: 2@8mA@2A/3@40mA@4AV Collector-emitter Voltage: 100V Emitter-base Voltage (max): 5V Lead Free Status / Rohs Status: Compliant Mounting: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package Type: DPAK Pin Count: 2 +Tab Polarity: PNP
• MJD117ITU
  Fairchild Semiconductor — Fairchild Semiconductor MJD117ITU Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Dc Collector/base Gain Hfe Min: 500 at 0.5 A at 3 V Dc Current Gain Hfe Max: 500 at 0.5 A at 3 V Emitter- Base Voltage Vebo: 5 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Package / Case: IPAK Transistor Polarity: PNP Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V DC Collector/Base Gain hfe Min: 500 at 0.5 A at 3 V DC Current Gain hFE Max: 500 at 0.5 A at 3 V
• MJD117ITU
  Fairchild Semiconductor — Fairchild Semiconductor MJD117ITU Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Dc Collector/base Gain Hfe Min: 500 at 0.5 A at 3 V Dc Current Gain Hfe Max: 500 at 0.5 A at 3 V Emitter- Base Voltage Vebo: 5 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Package / Case: IPAK Transistor Polarity: PNP Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V DC Collector/Base Gain hfe Min: 500 at 0.5 A at 3 V DC Current Gain hFE Max: 500 at 0.5 A at 3 V