Результаты поиска IRF840

Найдено 48 результатов.

• IRF840APBF
  Vishay Semiconductors — Single-Gate MOSFET Transistors N-Chan 500V 8.0 Amp
• IRF840SPBF
  Vishay Semiconductors — Single-Gate MOSFET Transistors N-Chan 500V 8.0 Amp
• IRF840STRL
  Vishay/Siliconix — Single-Gate MOSFET Transistors N-Chan 500V 8.0 Amp
• IRF840STRR
  Vishay/Siliconix — Single-Gate MOSFET Transistors N-Chan 500V 8.0 Amp
• IRF840BPBF
  Siliconix — Siliconix IRF840BPBF Configuration: Single Drain-source Breakdown Voltage: 500 V Package / Case: TO-220AB-3 Product Category: MOSFET Resistance Drain-source Rds (on): 850 mOhms at 10 V Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 500 V Resistance Drain-Source RDS (on): 850 mOhms at 10 V
• IRF8401111
  IR (International Rectifier) —
• IRF8401111
  IR (International Rectifier) —
• IRF840B_05
  Fairchild Semiconductor —
• IRF840LPBF
  Vishay Intertechnology — Vishay Intertechnology IRF840LPBF Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 500 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 8 A Resistance Drain-Source RDS (on): 0.85 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220AB Fall Time: 20 ns Minimum Operating Temperature: - 55 C Power Dissipation: 125 W Rise Time: 23 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 49 ns
• IRF840LPBF
  Vishay Intertechnology — Vishay Intertechnology IRF840LPBF Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 500 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 8 A Resistance Drain-Source RDS (on): 0.85 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220AB Fall Time: 20 ns Minimum Operating Temperature: - 55 C Power Dissipation: 125 W Rise Time: 23 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 49 ns