Результаты поиска IRF740

Найдено 89 результатов.

• IRF740PBF
  Vishay Semiconductors — Single-Gate MOSFET Transistors N-Chan 400V 10 Amp
• IRF7403TR
  International Rectifier — MOSFET N-CH 30V 8.5A 8-SOIC
• IRF7402TR
  International Rectifier — MOSFET N-CH 20V 6.8A 8-SOIC
• IRF7401TR
  International Rectifier — 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
• IRF7406TR
  IR (International Rectifier) —
• IRF7404TR
  IR (International Rectifier) —
• IRF7404TR
  IR (International Rectifier) —
• IRF740B_Q
  Fairchild Semiconductor — Fairchild Semiconductor IRF740B_Q Configuration: Single Continuous Drain Current: 10 A Drain-source Breakdown Voltage: 400 V Fall Time: 85 ns Forward Transconductance Gfs (max / Min): 3.5 S Gate-source Breakdown Voltage: +/- 30 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220AB Power Dissipation: 134 W Resistance Drain-source Rds (on): 0.54 Ohms Rise Time: 80 ns Transistor Polarity: N-Channel Typical Turn-off Delay Time: 125 ns Drain-Source Breakdown Voltage: 400 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 0.54 Ohms Forward Transconductance gFS (Max / Min): 3.5 S Typical Turn-Off Delay Time: 125 ns
• IRF740LCS
  Vishay Intertechnology — Vishay Intertechnology IRF740LCS Product Category: MOSFET Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 400 V Gate-Source Breakdown Voltage: +/- 33 V Continuous Drain Current: 10 A Resistance Drain-Source RDS (on): 0.55 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220 Fall Time: 20 ns Minimum Operating Temperature: - 65 C Power Dissipation: 125 W Rise Time: 31 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 25 ns
• IRF740LCL
  Vishay Siliconix — MOSFET N-CH 400V 10A TO-262